Spectral stability of V2 centres in sub-micron 4H-SiC membranes
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866929339952529408 |
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| author | Heiler, Jonah Körber, Jonathan Hesselmeier, Erik Kuna, Pierre Stöhr, Rainer Fuchs, Philipp Ghezellou, Misagh Ul-Hassan, Jawad Knolle, Wolfgang Becher, Christoph Kaiser, Florian Wrachtrup, Jörg |
| author_facet | Heiler, Jonah Körber, Jonathan Hesselmeier, Erik Kuna, Pierre Stöhr, Rainer Fuchs, Philipp Ghezellou, Misagh Ul-Hassan, Jawad Knolle, Wolfgang Becher, Christoph Kaiser, Florian Wrachtrup, Jörg |
| contents | Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to $0.25\,\rmμm$. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of $3-4\,\rmÅ$, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of $0.7 \,\rmμm$. For silicon vacancy centres in thinner membranes down to $0.25\,\rmμm$, we observe spectral wandering, however, optical linewidths remain below $200\,\rm MHz$, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_12617 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Spectral stability of V2 centres in sub-micron 4H-SiC membranes Heiler, Jonah Körber, Jonathan Hesselmeier, Erik Kuna, Pierre Stöhr, Rainer Fuchs, Philipp Ghezellou, Misagh Ul-Hassan, Jawad Knolle, Wolfgang Becher, Christoph Kaiser, Florian Wrachtrup, Jörg Quantum Physics Optics Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to $0.25\,\rmμm$. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of $3-4\,\rmÅ$, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of $0.7 \,\rmμm$. For silicon vacancy centres in thinner membranes down to $0.25\,\rmμm$, we observe spectral wandering, however, optical linewidths remain below $200\,\rm MHz$, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring. |
| title | Spectral stability of V2 centres in sub-micron 4H-SiC membranes |
| topic | Quantum Physics Optics |
| url | https://arxiv.org/abs/2310.12617 |