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| Autori principali: | , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2023
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2310.18094 |
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| _version_ | 1866916234767892480 |
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| author | Ulibarri, A. C. Lew, C. T. K. Lim, S. Q. McCallum, J. C. Johnson, B. C. Harmand, J. C. Peretti, J. Rowe, A. C. H. |
| author_facet | Ulibarri, A. C. Lew, C. T. K. Lim, S. Q. McCallum, J. C. Johnson, B. C. Harmand, J. C. Peretti, J. Rowe, A. C. H. |
| contents | A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga$_{\textrm{i}}$ defect's local chemical environment. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_18094 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Deep-level structure of the spin-active recombination center in dilute nitrides Ulibarri, A. C. Lew, C. T. K. Lim, S. Q. McCallum, J. C. Johnson, B. C. Harmand, J. C. Peretti, J. Rowe, A. C. H. Materials Science Mesoscale and Nanoscale Physics A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga$_{\textrm{i}}$ defect's local chemical environment. |
| title | Deep-level structure of the spin-active recombination center in dilute nitrides |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2310.18094 |