Image de couverture de livre

Ultralong-term high-density data storage with atomic defects in SiC

Fuente: arXiv

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Hollenbach, M., Kasper, C., Erb, D., Bischoff, L., Hlawacek, G., Kraus, H., Kada, W., Ohshima, T., Helm, M., Facsko, S., Dyakonov, V., Astakhov, G. V.
Format:	Preprint
Publié:	2023
Sujets:	Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires

Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
par: Hollenbach, M., et autres
Publié: (2024)

Programmable Activation of Quantum Emitters in High‐Purity Silicon with Focused Carbon Ion Beams
par: M. Hollenbach, et autres
Publié: (2024)

Imaging of electrical signals in a quantum SiC microscope
par: Suhana, A., et autres
Publié: (2025)

Tuning the Morphology of Self‐Assembled Nanopatterns on MgO(001) Surfaces by Sequential Broad‐Beam Ion Irradiation
par: Denise J. Erb, et autres
Publié: (2025)

Telecom-band quantum memory with chlorine defects in silicon carbide
par: Anisimov, A. N., et autres
Publié: (2026)

Comparative study of divacancies in 3C-, 4H- and 6H-SiC
par: Shafizade, Danial, et autres
Publié: (2025)

Gelcasting for the densification repair of delamination defects in SiC f /SiC composites
par: Yiran Lin, et autres
Publié: (2026)

Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields
par: Hernández-Mínguez, A., et autres
Publié: (2024)

Synthesis of sub‐micron sized SiC particles with high defect density by using polytetrafluoroethylene as an additive
par: Yun Xing, et autres
Publié: (2024)

Effect of Helium Ion Implantation on 3C-SiC Nanomechanical String Resonators
par: Bredol, Philipp, et autres
Publié: (2024)

Electronic Final States in Nuclear $β$ Decay: A Sudden-Approximation Framework
par: D'yakonov, G. V.
Publié: (2026)

On the experimental properties of the TS defect in 4H-SiC
par: Lehmeyer, Johannes A. F., et autres
Publié: (2024)

Relationship of defects and mechanical performance of high‐crystalline SiC fibers after ultra‐high‐temperature annealing
par: Jing Chen, et autres
Publié: (2025)

Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
par: Tahara, Kosuke, et autres
Publié: (2024)

TCAD modeling of radiation-induced defects in 4H-SiC diodes
par: Gaggl, Philipp, et autres
Publié: (2024)

Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies
par: Murzakhanov, F. F., et autres
Publié: (2024)

Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
par: Jousseaume, Yann, et autres
Publié: (2024)

14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
par: Murzakhanov, F. F., et autres
Publié: (2024)

Gas Heating, Chemistry, and Infrared Spectra in Intermediate-Aged Disks Around Low Mass Stars
par: D. Hollenbach
Publié: (2004)

Molecular dynamics simulation study of mechanical properties of 3C-SiC with extended defects
par: Shmahlii, Serhii, et autres
Publié: (2026)

Preparation of jointed composites with interconnected SiC nanowires network for nuclear SiC fiber reinforced SiC composites
par: Meihan Ren, et autres
Publié: (2024)

Point defects and their dynamic behaviors in silver monolayer intercalated between graphene and SiC
par: Pham, Van Dong, et autres
Publié: (2025)

Evaluation of SiC detector performances for energy and timing measurements
par: Martorana, N. S., et autres
Publié: (2025)

Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
par: Younesi, Ali Tayefeh, et autres
Publié: (2026)

High-temperature threshold of damage of SiC by swift heavy ions
par: Zainutdinov, D. I., et autres
Publié: (2024)

BN recession and recession cessation in SiC/BN/SiC composites
par: Shingo Kanazawa, et autres
Publié: (2025)

Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
par: Hessenauer, Jannis, et autres
Publié: (2025)

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes
par: Kinnock V. Munthali
Publié: (2014)

Dataset for SiC and Si detectors comparison for high carbon energy spectrometry
par: Cutroneo, Mariapompea
Publié: (2024)

Detection of the linear SiC$_3$ and SiC$_5$ radicals in IRC\,+10216
par: Cernicharo, José, et autres
Publié: (2025)

Modeling of industrial isothermal chemical vapor infiltration process for C/SiC structural composites
par: Vijay M. Shinde, et autres
Publié: (2025)

Rare earth silicate in SiC f /SiC composites: Toward water‒oxygen corrosion resistance in high‐temperature gas environment
par: Longjiao Pu, et autres
Publié: (2025)

Stiffness prediction and analysis of needled C/SiC composites considering defects: Based on the GMC and IPSO‐FNN
par: Junlong Wang, et autres
Publié: (2025)

Absence of reflectivity of the phonon-polariton at the SiC surface from the metal mask edge
par: Ivchenko, V. S., et autres
Publié: (2025)

Monolithic 4H-SiC nanomechanical resonators with high intrinsic quality factors
par: Hochreiter, A., et autres
Publié: (2025)

Greedy Gossiping
par: Williams, Kada
Publié: (2025)

Torus Queen Independence
par: Williams, Kada
Publié: (2024)

The Width of a Ball in a Hypercube
par: Williams, Kada
Publié: (2024)

A Correlation Inequality on Three Functions
par: Williams, Kada
Publié: (2025)

The Width of Hamming Balls
par: Williams, Kada
Publié: (2024)