Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer
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| Format: | Preprint |
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2023
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| author | Milanesio, M. Paolozzi, L. Moretti, T. Cardella, R. Kugathasan, T. Martinelli, F. Picardi, A. Semendyaev, I. Zambito, S. Nakamura, K. Tabuko, Y. Togawa, M. Elviretti, M. Rücker, H. Cadoux, F. Cardarelli, R. Débieux, S. Favre, Y. Fenoglio, C. A. Ferrere, D. Gonzalez-Sevilla, S. Iodice, L. Kotitsa, R. Magliocca, C. Nessi, M. Pizarro-Medina, A. Iglesias, J. Sabater Saidi, J. Pinto, M. Vicente Barreto Iacobucci, G. |
| author_facet | Milanesio, M. Paolozzi, L. Moretti, T. Cardella, R. Kugathasan, T. Martinelli, F. Picardi, A. Semendyaev, I. Zambito, S. Nakamura, K. Tabuko, Y. Togawa, M. Elviretti, M. Rücker, H. Cadoux, F. Cardarelli, R. Débieux, S. Favre, Y. Fenoglio, C. A. Ferrere, D. Gonzalez-Sevilla, S. Iodice, L. Kotitsa, R. Magliocca, C. Nessi, M. Pizarro-Medina, A. Iglesias, J. Sabater Saidi, J. Pinto, M. Vicente Barreto Iacobucci, G. |
| contents | A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_19398 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer Milanesio, M. Paolozzi, L. Moretti, T. Cardella, R. Kugathasan, T. Martinelli, F. Picardi, A. Semendyaev, I. Zambito, S. Nakamura, K. Tabuko, Y. Togawa, M. Elviretti, M. Rücker, H. Cadoux, F. Cardarelli, R. Débieux, S. Favre, Y. Fenoglio, C. A. Ferrere, D. Gonzalez-Sevilla, S. Iodice, L. Kotitsa, R. Magliocca, C. Nessi, M. Pizarro-Medina, A. Iglesias, J. Sabater Saidi, J. Pinto, M. Vicente Barreto Iacobucci, G. Instrumentation and Detectors A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2. |
| title | Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2310.19398 |