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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2310.19510 |
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| _version_ | 1866916511454593024 |
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| author | Sarihan, Murat Can Huang, Jiahui Kang, Jin Ho Fan, Cody Liu, Wei Azizur-Rahman, Khalifa M. Liang, Baolai Wong, Chee Wei |
| author_facet | Sarihan, Murat Can Huang, Jiahui Kang, Jin Ho Fan, Cody Liu, Wei Azizur-Rahman, Khalifa M. Liang, Baolai Wong, Chee Wei |
| contents | Color centers in the O-band (1260-1360 nm) are critical for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band defects in silicon: T centers and $^*$Cu (transition metal) color centers. During T center formation, we observed the formation and dissolution of various defects, including the copper-silver-related defect with a doublet line around 1312 nm ($^*$Cu$^{0}_{n}$), near the optical fiber zero dispersion wavelength. We then investigate the photophysics of both T and $^*$Cu centers, focusing on their emission spectra and spin properties to assess their potential for high-fidelity spin-photon interfaces. Additionally, we report a 25\% broadening of the $^*$Cu$^{0}_{0}$ line under a 0.5 T magnetic field, potentially linked to spin degeneracy, suggesting that this defect may provide a promising alternative to T centers for spin-photon interfaces. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_19510 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications Sarihan, Murat Can Huang, Jiahui Kang, Jin Ho Fan, Cody Liu, Wei Azizur-Rahman, Khalifa M. Liang, Baolai Wong, Chee Wei Quantum Physics Atomic Physics Optics Color centers in the O-band (1260-1360 nm) are critical for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band defects in silicon: T centers and $^*$Cu (transition metal) color centers. During T center formation, we observed the formation and dissolution of various defects, including the copper-silver-related defect with a doublet line around 1312 nm ($^*$Cu$^{0}_{n}$), near the optical fiber zero dispersion wavelength. We then investigate the photophysics of both T and $^*$Cu centers, focusing on their emission spectra and spin properties to assess their potential for high-fidelity spin-photon interfaces. Additionally, we report a 25\% broadening of the $^*$Cu$^{0}_{0}$ line under a 0.5 T magnetic field, potentially linked to spin degeneracy, suggesting that this defect may provide a promising alternative to T centers for spin-photon interfaces. |
| title | Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications |
| topic | Quantum Physics Atomic Physics Optics |
| url | https://arxiv.org/abs/2310.19510 |