Al$_3$Sc thin films for advanced interconnect applications
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arXiv
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866913339784822784 |
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| author | Soulié, Jean-Philippe Sankaran, Kiroubanand Founta, Valeria Opsomer, Karl Detavernier, Christophe Van de Vondel, Joris Pourtois, Geoffrey Tőkei, Zsolt Swerts, Johan Adelmann, Christoph |
| author_facet | Soulié, Jean-Philippe Sankaran, Kiroubanand Founta, Valeria Opsomer, Karl Detavernier, Christophe Van de Vondel, Joris Pourtois, Geoffrey Tőkei, Zsolt Swerts, Johan Adelmann, Christoph |
| contents | Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190°C, followed by recrystallization at 440°C. After annealing at 500°C, 24 nm thick stoichiometric Al$_3$Sc showed a resistivity of 12.6 $μΩ$cm, limited by a combination of grain boundary and point defect (disorder) scattering. Together with ab initio calculations that found a mean free path of the charge carriers of 7 nm for stoichiometric Al$_3$Sc, these results indicate that Al$_3$Sc bears promise for future interconnect metallization schemes. Challenges remain in minimizing the formation of secondary phases as well as in the control of the non-stoichiometric surface oxidation and interfacial reactions with underlying dielectrics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_20485 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Al$_3$Sc thin films for advanced interconnect applications Soulié, Jean-Philippe Sankaran, Kiroubanand Founta, Valeria Opsomer, Karl Detavernier, Christophe Van de Vondel, Joris Pourtois, Geoffrey Tőkei, Zsolt Swerts, Johan Adelmann, Christoph Materials Science Al$_x$Sc$_{1-x}$ thin films have been studied with compositions around Al$_3$Sc ($x$ = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films were x-ray amorphous but crystallized at 190°C, followed by recrystallization at 440°C. After annealing at 500°C, 24 nm thick stoichiometric Al$_3$Sc showed a resistivity of 12.6 $μΩ$cm, limited by a combination of grain boundary and point defect (disorder) scattering. Together with ab initio calculations that found a mean free path of the charge carriers of 7 nm for stoichiometric Al$_3$Sc, these results indicate that Al$_3$Sc bears promise for future interconnect metallization schemes. Challenges remain in minimizing the formation of secondary phases as well as in the control of the non-stoichiometric surface oxidation and interfacial reactions with underlying dielectrics. |
| title | Al$_3$Sc thin films for advanced interconnect applications |
| topic | Materials Science |
| url | https://arxiv.org/abs/2310.20485 |