Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866910538438541312 |
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| author | Hernández, E. Nieto Yağcı, H. B. Pugliese, V. Aprà, P. Cannon, J. K. Bishop, S. G. Hadden, J. Tchernij, S. Ditalia Olivero Bennett, A. J. Forneris, J. |
| author_facet | Hernández, E. Nieto Yağcı, H. B. Pugliese, V. Aprà, P. Cannon, J. K. Bishop, S. G. Hadden, J. Tchernij, S. Ditalia Olivero Bennett, A. J. Forneris, J. |
| contents | Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamond. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in creation of ensembles at the maximum implantation fluence. Annealing at 600 °C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters, and open new perspectives in the defect engineering of SPEs in solid state. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2310_20540 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing Hernández, E. Nieto Yağcı, H. B. Pugliese, V. Aprà, P. Cannon, J. K. Bishop, S. G. Hadden, J. Tchernij, S. Ditalia Olivero Bennett, A. J. Forneris, J. Applied Physics Materials Science Quantum Physics Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamond. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in creation of ensembles at the maximum implantation fluence. Annealing at 600 °C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters, and open new perspectives in the defect engineering of SPEs in solid state. |
| title | Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing |
| topic | Applied Physics Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2310.20540 |