Identifying electronic transitions of defects in hexagonal boron nitride for quantum memories
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arXiv
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| Format: | Preprint |
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2023
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| _version_ | 1866913342958862336 |
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| author | Cholsuk, Chanaprom Cakan, Asli Suwanna, Sujin Vogl, Tobias |
| author_facet | Cholsuk, Chanaprom Cakan, Asli Suwanna, Sujin Vogl, Tobias |
| contents | A quantum memory is a crucial keystone for enabling large-scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems are developed thus far, none of them can perfectly meet all requirements. This work herein proposes a quantum memory based on color centers in hexagonal boron nitride (hBN), where its performance is evaluated based on a simple theoretical model of suitable defects in a cavity. Employing density functional theory calculations, 257 triplet and 211 singlet spin electronic transitions are investigated. Among these defects, it is found that some defects inherit the $Λ$ electronic structures desirable for a Raman-type quantum memory and optical transitions can couple with other quantum systems. Further, the required quality factor and bandwidth are examined for each defect to achieve a 95% writing efficiency. Both parameters are influenced by the radiative transition rate in the defect state. In addition, inheriting triplet-singlet spin multiplicity indicates the possibility of being a quantum sensing, in particular, optically detected magnetic resonance. This work therefore demonstrates the potential usage of hBN defects as a quantum memory in future quantum networks. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2310_20645 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Identifying electronic transitions of defects in hexagonal boron nitride for quantum memories Cholsuk, Chanaprom Cakan, Asli Suwanna, Sujin Vogl, Tobias Quantum Physics Materials Science Applied Physics A quantum memory is a crucial keystone for enabling large-scale quantum networks. Applicable to the practical implementation, specific properties, i.e., long storage time, selective efficient coupling with other systems, and a high memory efficiency are desirable. Though many quantum memory systems are developed thus far, none of them can perfectly meet all requirements. This work herein proposes a quantum memory based on color centers in hexagonal boron nitride (hBN), where its performance is evaluated based on a simple theoretical model of suitable defects in a cavity. Employing density functional theory calculations, 257 triplet and 211 singlet spin electronic transitions are investigated. Among these defects, it is found that some defects inherit the $Λ$ electronic structures desirable for a Raman-type quantum memory and optical transitions can couple with other quantum systems. Further, the required quality factor and bandwidth are examined for each defect to achieve a 95% writing efficiency. Both parameters are influenced by the radiative transition rate in the defect state. In addition, inheriting triplet-singlet spin multiplicity indicates the possibility of being a quantum sensing, in particular, optically detected magnetic resonance. This work therefore demonstrates the potential usage of hBN defects as a quantum memory in future quantum networks. |
| title | Identifying electronic transitions of defects in hexagonal boron nitride for quantum memories |
| topic | Quantum Physics Materials Science Applied Physics |
| url | https://arxiv.org/abs/2310.20645 |