Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias
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arXiv
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| Format: | Preprint |
| Veröffentlicht: |
2023
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| _version_ | 1866917672554332160 |
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| author | Kheirabadi, Narjes |
| author_facet | Kheirabadi, Narjes |
| contents | Based on the full Hamiltonian of bilayer graphene, phase transitions are realized by the change of the in-plane magnetic field and the electrical bias in bilayer graphene. We show that the engineering of Chern numbers of four bands is possible by an applied in-plane magnetic field and an electrical bias in bilayer graphene. Our results are promising for the exploration of new topological phenomena in 2D materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_00331 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias Kheirabadi, Narjes Mesoscale and Nanoscale Physics Based on the full Hamiltonian of bilayer graphene, phase transitions are realized by the change of the in-plane magnetic field and the electrical bias in bilayer graphene. We show that the engineering of Chern numbers of four bands is possible by an applied in-plane magnetic field and an electrical bias in bilayer graphene. Our results are promising for the exploration of new topological phenomena in 2D materials. |
| title | Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2311.00331 |