Effects of W alloying on the electronic structure, phase stability and thermoelectric power factor in epitaxial CrN thin films

Fuente: arXiv
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Hauptverfasser: Singh, Niraj Kumar, Hjort, Victor, Honnali, Sanath Kumar, Gambino, Davide, Febvrier, Arnaud le, Ramanath, Ganpati, Alling, Björn, Eklund, Per
Format: Preprint
Veröffentlicht: 2023
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author Singh, Niraj Kumar
Hjort, Victor
Honnali, Sanath Kumar
Gambino, Davide
Febvrier, Arnaud le
Ramanath, Ganpati
Alling, Björn
Eklund, Per
author_facet Singh, Niraj Kumar
Hjort, Victor
Honnali, Sanath Kumar
Gambino, Davide
Febvrier, Arnaud le
Ramanath, Ganpati
Alling, Björn
Eklund, Per
contents CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF into the conduction band, while retaining dispersive Cr 3d bands. These features are conducive for both high electrical conductivity σand high Seebeck coefficient α, and hence the thermoelectric power factor α^2σ. To investigate this possibility, epitaxial CrWxNz films were grown on c-plane sapphire by dc-magnetron sputtering. However, even films with the lowest W concentration (x = 0.03) in our study contained metallic h-Cr2N, which is not conducive for a high α. Nevertheless, the films exhibit a sizeable power factor of α^2σ~ 4.7 x 10-4 Wm-1K-2 due to high σ~ 700 Scm-1, and a moderate α~ -25 ~{^^^^00b5}V/K. Increasing h-Cr2N fractions in the 0.03 < x \le 0.19 range monotonically increases σ, but severely diminishes αleading to two orders of magnitude decrease in α^2σ. This trend continues with x > 0.19 due to W precipitation. These findings indicate that dilute W additions below its solubility limit in CrN is important for realizing high thermoelectric power factor in CrWxNz alloy films.
format Preprint
id arxiv_https___arxiv_org_abs_2311_02453
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Effects of W alloying on the electronic structure, phase stability and thermoelectric power factor in epitaxial CrN thin films
Singh, Niraj Kumar
Hjort, Victor
Honnali, Sanath Kumar
Gambino, Davide
Febvrier, Arnaud le
Ramanath, Ganpati
Alling, Björn
Eklund, Per
Materials Science
CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF into the conduction band, while retaining dispersive Cr 3d bands. These features are conducive for both high electrical conductivity σand high Seebeck coefficient α, and hence the thermoelectric power factor α^2σ. To investigate this possibility, epitaxial CrWxNz films were grown on c-plane sapphire by dc-magnetron sputtering. However, even films with the lowest W concentration (x = 0.03) in our study contained metallic h-Cr2N, which is not conducive for a high α. Nevertheless, the films exhibit a sizeable power factor of α^2σ~ 4.7 x 10-4 Wm-1K-2 due to high σ~ 700 Scm-1, and a moderate α~ -25 ~{^^^^00b5}V/K. Increasing h-Cr2N fractions in the 0.03 < x \le 0.19 range monotonically increases σ, but severely diminishes αleading to two orders of magnitude decrease in α^2σ. This trend continues with x > 0.19 due to W precipitation. These findings indicate that dilute W additions below its solubility limit in CrN is important for realizing high thermoelectric power factor in CrWxNz alloy films.
title Effects of W alloying on the electronic structure, phase stability and thermoelectric power factor in epitaxial CrN thin films
topic Materials Science
url https://arxiv.org/abs/2311.02453