Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866910435763027968 |
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| author | Zhang, Xian Liu, Bang Huang, Junsheng Cao, Xinwei Zhang, Yunzhe Guo, Zhi-Xin |
| author_facet | Zhang, Xian Liu, Bang Huang, Junsheng Cao, Xinwei Zhang, Yunzhe Guo, Zhi-Xin |
| contents | In this study, we present first-principles calculations that introduce a novel nonvolatile spin field-effect transistor (Spin-FET) utilizing a van der Waals multiferroic heterostructure, specifically VSi2N4/Sc2CO2. We demonstrate that inverting the ferroelectric polarization in a Sc2CO2 monolayer can effectively modulate the electronic states of a VSi2N4 monolayer, enabling a transition from half-metal to half-semiconductor. This transition significantly alters the electronic transport properties. Furthermore, we construct a Spin-FET device based on this multiferroic heterostructure and observe that the VSi2N4/Sc2CO2-based Spin-FET exhibits exceptional all-electric-controlled performance. Notably, the inversion of the Sc2CO2 ferroelectric polarization yields a substantial on-off current ratio, approximately 650\%, under a minimal bias voltage of 0.02 V. Additionally, we identify a unique spatially-separated spin-polarized transport phenomenon, wherein pure spin-up electrons transport exclusively through VSi2N4, and spin-down electrons through Sc$_2$CO$_2$. Our findings suggest a promising pathway for developing low-energy-dissipation and nonvolatile FET devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2311_03690 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure Zhang, Xian Liu, Bang Huang, Junsheng Cao, Xinwei Zhang, Yunzhe Guo, Zhi-Xin Mesoscale and Nanoscale Physics Materials Science In this study, we present first-principles calculations that introduce a novel nonvolatile spin field-effect transistor (Spin-FET) utilizing a van der Waals multiferroic heterostructure, specifically VSi2N4/Sc2CO2. We demonstrate that inverting the ferroelectric polarization in a Sc2CO2 monolayer can effectively modulate the electronic states of a VSi2N4 monolayer, enabling a transition from half-metal to half-semiconductor. This transition significantly alters the electronic transport properties. Furthermore, we construct a Spin-FET device based on this multiferroic heterostructure and observe that the VSi2N4/Sc2CO2-based Spin-FET exhibits exceptional all-electric-controlled performance. Notably, the inversion of the Sc2CO2 ferroelectric polarization yields a substantial on-off current ratio, approximately 650\%, under a minimal bias voltage of 0.02 V. Additionally, we identify a unique spatially-separated spin-polarized transport phenomenon, wherein pure spin-up electrons transport exclusively through VSi2N4, and spin-down electrons through Sc$_2$CO$_2$. Our findings suggest a promising pathway for developing low-energy-dissipation and nonvolatile FET devices. |
| title | Nonvolatile spin field effect transistor based on VSi2N4/Sc2CO2 multiferroic heterostructure |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2311.03690 |