Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2023
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| _version_ | 1866914736890707968 |
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| author | Gsponer, Andreas Knopf, Matthias Gaggl, Philipp Burin, Jürgen Waid, Simon Bergauer, Thomas |
| author_facet | Gsponer, Andreas Knopf, Matthias Gaggl, Philipp Burin, Jürgen Waid, Simon Bergauer, Thomas |
| contents | For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy $ε_{\text{i}}$ published in the literature vary significantly. This work presents an experimental determination of $ε_{\text{i}}$ using $50$ $μ$m 4H-SiC p-n diodes designed for particle detection in high-energy physics. The detector response was measured for $α$ particles between 4.2 MeV and 5.6 MeV for 4H-SiC and a silicon reference device. Different $α$ energies were obtained by using multiple nuclides and varying the effective air gap between the $α$ source and the detector. The energy deposited in the detectors was determined using a Monte Carlo simulation, taking into account the device cross-sections. A linear fit of the detector response to the deposited energy yields $ε_{\text{i}} = (7.83 \pm 0.02)\;\text{eV}$, which agrees well with the most recent literature. For the 4H-SiC detectors, a linewidth of 28 keV FWHM was achieved, corresponding to an energy resolution of 0.5\%. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_03902 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode Gsponer, Andreas Knopf, Matthias Gaggl, Philipp Burin, Jürgen Waid, Simon Bergauer, Thomas Instrumentation and Detectors For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy $ε_{\text{i}}$ published in the literature vary significantly. This work presents an experimental determination of $ε_{\text{i}}$ using $50$ $μ$m 4H-SiC p-n diodes designed for particle detection in high-energy physics. The detector response was measured for $α$ particles between 4.2 MeV and 5.6 MeV for 4H-SiC and a silicon reference device. Different $α$ energies were obtained by using multiple nuclides and varying the effective air gap between the $α$ source and the detector. The energy deposited in the detectors was determined using a Monte Carlo simulation, taking into account the device cross-sections. A linear fit of the detector response to the deposited energy yields $ε_{\text{i}} = (7.83 \pm 0.02)\;\text{eV}$, which agrees well with the most recent literature. For the 4H-SiC detectors, a linewidth of 28 keV FWHM was achieved, corresponding to an energy resolution of 0.5\%. |
| title | Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2311.03902 |