Floquet engineering of binding in doped and photo-doped Mott insulators
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arXiv
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| Natura: | Preprint |
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2023
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| _version_ | 1866909218848636928 |
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| author | Sarkar, Madhumita Lenarčič, Zala Golež, Denis |
| author_facet | Sarkar, Madhumita Lenarčič, Zala Golež, Denis |
| contents | We investigate the emergence of bound states in chemically and photo-doped Mott insulators, mediated by spin and $η$-pairing fluctuations within both 2-leg ladder and 2D systems. To effectively describe the photo and chemically doped state on the same footings, we employ the Schrieffer-Wolff transformation, resulting in a generalized $t$-$J$ model. Our results demonstrate that the binding energies and localization length in the chemically and photo-doped regimes are comparable, with $η$-pairing fluctuations not playing a crucial role. Furthermore, we show that manipulating the binding is possible through external periodic driving, a technique known as Floquet engineering, leading to significantly enhanced binding energies. We also roughly estimate the lifetime of photo-doped states under periodic driving conditions based on the Fermi golden rule. Lastly, we propose experimental protocols for realizing Hubbard excitons in cold-atom experiments. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_04899 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Floquet engineering of binding in doped and photo-doped Mott insulators Sarkar, Madhumita Lenarčič, Zala Golež, Denis Strongly Correlated Electrons Quantum Gases Quantum Physics We investigate the emergence of bound states in chemically and photo-doped Mott insulators, mediated by spin and $η$-pairing fluctuations within both 2-leg ladder and 2D systems. To effectively describe the photo and chemically doped state on the same footings, we employ the Schrieffer-Wolff transformation, resulting in a generalized $t$-$J$ model. Our results demonstrate that the binding energies and localization length in the chemically and photo-doped regimes are comparable, with $η$-pairing fluctuations not playing a crucial role. Furthermore, we show that manipulating the binding is possible through external periodic driving, a technique known as Floquet engineering, leading to significantly enhanced binding energies. We also roughly estimate the lifetime of photo-doped states under periodic driving conditions based on the Fermi golden rule. Lastly, we propose experimental protocols for realizing Hubbard excitons in cold-atom experiments. |
| title | Floquet engineering of binding in doped and photo-doped Mott insulators |
| topic | Strongly Correlated Electrons Quantum Gases Quantum Physics |
| url | https://arxiv.org/abs/2311.04899 |