Charge qubits based on ultra-thin topological insulator films

Fuente: arXiv
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Hauptverfasser: Zhang, Kexin, Lepage, Hugo V., Dong, Ying, Barnes, Crispin H. W.
Format: Preprint
Veröffentlicht: 2023
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author Zhang, Kexin
Lepage, Hugo V.
Dong, Ying
Barnes, Crispin H. W.
author_facet Zhang, Kexin
Lepage, Hugo V.
Dong, Ying
Barnes, Crispin H. W.
contents We study how to use the surface states in a Bi$_{2}$Se$_{3}$ topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing. We demonstrate that: (i) surface states under the finite size effect can effectively form a two-level system where their energy levels lie in between the bulk energy gap and a logic qubit can be constructed, (ii) the qubit can be initialized and manipulated using electric pulses of simple forms, (iii) two-qubit entanglement is achieved through a $\sqrt{\text{SWAP}}$ operation when the two qubits are in a parallel setup, and (iv) alternatively, a Floquet state can be exploited to construct a qubit and two Floquet qubits can be entangled through a Controlled-NOT operation. The Floquet qubit offers robustness to background noise since there is always an oscillating electric field applied, and the single qubit operations are controlled by amplitude modulation of the oscillating field, which is convenient experimentally.
format Preprint
id arxiv_https___arxiv_org_abs_2311_05166
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Charge qubits based on ultra-thin topological insulator films
Zhang, Kexin
Lepage, Hugo V.
Dong, Ying
Barnes, Crispin H. W.
Mesoscale and Nanoscale Physics
Quantum Physics
We study how to use the surface states in a Bi$_{2}$Se$_{3}$ topological insulator ultra-thin film that are affected by finite size effects for the purpose of quantum computing. We demonstrate that: (i) surface states under the finite size effect can effectively form a two-level system where their energy levels lie in between the bulk energy gap and a logic qubit can be constructed, (ii) the qubit can be initialized and manipulated using electric pulses of simple forms, (iii) two-qubit entanglement is achieved through a $\sqrt{\text{SWAP}}$ operation when the two qubits are in a parallel setup, and (iv) alternatively, a Floquet state can be exploited to construct a qubit and two Floquet qubits can be entangled through a Controlled-NOT operation. The Floquet qubit offers robustness to background noise since there is always an oscillating electric field applied, and the single qubit operations are controlled by amplitude modulation of the oscillating field, which is convenient experimentally.
title Charge qubits based on ultra-thin topological insulator films
topic Mesoscale and Nanoscale Physics
Quantum Physics
url https://arxiv.org/abs/2311.05166