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Autori principali: Woo, Steffi Y., Shao, Fuhui, Arora, Ashish, Schneider, Robert, Wu, Nianjheng, Mayne, Andrew J., Ho, Ching-Hwa, Och, Mauro, Mattevi, Cecilia, Reserbat-Plantey, Antoine, Moreno, Alvaro, Sheinfux, Hanan Herzig, Watanabe, Kenji, Taniguchi, Takashi, de Vasconcellos, Steffen Michaelis, Koppens, Frank H. L., Niu, Zhichuan, Stéphan, Odile, Kociak, Mathieu, de Abajo, F. Javier García, Bratschitsch, Rudolf, Konečná, Andrea, Tizei, Luiz H. G.
Natura: Preprint
Pubblicazione: 2023
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Accesso online:https://arxiv.org/abs/2311.07085
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author Woo, Steffi Y.
Shao, Fuhui
Arora, Ashish
Schneider, Robert
Wu, Nianjheng
Mayne, Andrew J.
Ho, Ching-Hwa
Och, Mauro
Mattevi, Cecilia
Reserbat-Plantey, Antoine
Moreno, Alvaro
Sheinfux, Hanan Herzig
Watanabe, Kenji
Taniguchi, Takashi
de Vasconcellos, Steffen Michaelis
Koppens, Frank H. L.
Niu, Zhichuan
Stéphan, Odile
Kociak, Mathieu
de Abajo, F. Javier García
Bratschitsch, Rudolf
Konečná, Andrea
Tizei, Luiz H. G.
author_facet Woo, Steffi Y.
Shao, Fuhui
Arora, Ashish
Schneider, Robert
Wu, Nianjheng
Mayne, Andrew J.
Ho, Ching-Hwa
Och, Mauro
Mattevi, Cecilia
Reserbat-Plantey, Antoine
Moreno, Alvaro
Sheinfux, Hanan Herzig
Watanabe, Kenji
Taniguchi, Takashi
de Vasconcellos, Steffen Michaelis
Koppens, Frank H. L.
Niu, Zhichuan
Stéphan, Odile
Kociak, Mathieu
de Abajo, F. Javier García
Bratschitsch, Rudolf
Konečná, Andrea
Tizei, Luiz H. G.
contents Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical doping, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs) to tailor novel functionalities remains largely unexplored. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton lineshape and charge state. Fano-like asymmetric spectral features are produced in WS$_{2}$, MoSe$_{2}$ and WSe$_{2}$ vdWHs combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe$_{2}$/graphene with a neutral exciton redshift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron-beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.
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id arxiv_https___arxiv_org_abs_2311_07085
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Engineering 2D material exciton lineshape with graphene/h-BN encapsulation
Woo, Steffi Y.
Shao, Fuhui
Arora, Ashish
Schneider, Robert
Wu, Nianjheng
Mayne, Andrew J.
Ho, Ching-Hwa
Och, Mauro
Mattevi, Cecilia
Reserbat-Plantey, Antoine
Moreno, Alvaro
Sheinfux, Hanan Herzig
Watanabe, Kenji
Taniguchi, Takashi
de Vasconcellos, Steffen Michaelis
Koppens, Frank H. L.
Niu, Zhichuan
Stéphan, Odile
Kociak, Mathieu
de Abajo, F. Javier García
Bratschitsch, Rudolf
Konečná, Andrea
Tizei, Luiz H. G.
Mesoscale and Nanoscale Physics
Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical doping, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs) to tailor novel functionalities remains largely unexplored. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton lineshape and charge state. Fano-like asymmetric spectral features are produced in WS$_{2}$, MoSe$_{2}$ and WSe$_{2}$ vdWHs combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe$_{2}$/graphene with a neutral exciton redshift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron-beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.
title Engineering 2D material exciton lineshape with graphene/h-BN encapsulation
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2311.07085