Magnetoresistive detection of perpendicular switching in a magnetic insulator

Fuente: arXiv
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Main Authors: Damerio, Silvia, Sunil, Achintya, Mehraeen, M., Zhang, Steven S. -L., Avci, Can O.
Format: Preprint
Published: 2023
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author Damerio, Silvia
Sunil, Achintya
Mehraeen, M.
Zhang, Steven S. -L.
Avci, Can O.
author_facet Damerio, Silvia
Sunil, Achintya
Mehraeen, M.
Zhang, Steven S. -L.
Avci, Can O.
contents Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conducting and insulating magnetic layers. However, the electrical readout of magnetization in the latter is inherently difficult, limiting its use in practical applications. Here, we demonstrate magnetoresistive detection of perpendicular magnetization reversal in an electrically insulating ferrimagnet, terbium iron garnet (TbIG). To do so, we use TbIG|Cu|TbCo, where TbCo is a conducting ferrimagnet and serves as the reference layer, and Cu is a nonmagnetic spacer. Current injection through Cu|TbCo allows us to detect the magnetization reversal of TbIG with a simple resistance readout during an external magnetic field sweep. By examining the effect of measurement temperature, TbCo composition, and Cu thickness on the sign and amplitude of the magnetoresistance, we conclude that the spin-dependent electron scattering at the TbIG|Cu interface is the underlying cause. Technologically-feasible magnetoresistive detection of perpendicular switching in a ferrimagnetic garnet is a breakthrough, as it opens broad avenues for novel insulating spintronic devices and concepts.
format Preprint
id arxiv_https___arxiv_org_abs_2311_07350
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Magnetoresistive detection of perpendicular switching in a magnetic insulator
Damerio, Silvia
Sunil, Achintya
Mehraeen, M.
Zhang, Steven S. -L.
Avci, Can O.
Mesoscale and Nanoscale Physics
Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conducting and insulating magnetic layers. However, the electrical readout of magnetization in the latter is inherently difficult, limiting its use in practical applications. Here, we demonstrate magnetoresistive detection of perpendicular magnetization reversal in an electrically insulating ferrimagnet, terbium iron garnet (TbIG). To do so, we use TbIG|Cu|TbCo, where TbCo is a conducting ferrimagnet and serves as the reference layer, and Cu is a nonmagnetic spacer. Current injection through Cu|TbCo allows us to detect the magnetization reversal of TbIG with a simple resistance readout during an external magnetic field sweep. By examining the effect of measurement temperature, TbCo composition, and Cu thickness on the sign and amplitude of the magnetoresistance, we conclude that the spin-dependent electron scattering at the TbIG|Cu interface is the underlying cause. Technologically-feasible magnetoresistive detection of perpendicular switching in a ferrimagnetic garnet is a breakthrough, as it opens broad avenues for novel insulating spintronic devices and concepts.
title Magnetoresistive detection of perpendicular switching in a magnetic insulator
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2311.07350