Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2023
|
| Schlagworte: | |
| Online-Zugang: | https://arxiv.org/abs/2311.11092 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866909833428467712 |
|---|---|
| author | Zhang, Jingda Quek, Su Ying |
| author_facet | Zhang, Jingda Quek, Su Ying |
| contents | Substitutional transition metal (TM) point defects have recently been controllably introduced in two-dimensional (2D) transition metal dichalcogenides. We identify quantum defect candidates through a first-principles materials discovery approach with 25 TM elements substituting Mo and W in 2D MoS2 and WSe2, respectively. We elucidate trends in the charge transition levels for these 50 systems and report the existence of defects with spin-triplet ground states and a zero-field splitting (ZFS) in the terahertz (THz) regime, in contrast to typical gigahertz values. These defects can couple to resonant near-infrared radiation, providing a route to applications as high-fidelity qubits controlled by spin-dependent optical transitions. The THz ZFS implies that these high-fidelity operations can take place at higher temperatures compared to the case for GHz qubits. Our results also point toward the possibility of realising a single-photon THz emitter. This work broadens the scope of quantum defects, highlighting the opportunities for next generation THz quantum technologies - an area of growing interest given the rapid advancement in the development of THz sources and detectors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_11092 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Quantum Defects in 2D Transition Metal Dichalcogenides for Terahertz Technologies Zhang, Jingda Quek, Su Ying Materials Science Substitutional transition metal (TM) point defects have recently been controllably introduced in two-dimensional (2D) transition metal dichalcogenides. We identify quantum defect candidates through a first-principles materials discovery approach with 25 TM elements substituting Mo and W in 2D MoS2 and WSe2, respectively. We elucidate trends in the charge transition levels for these 50 systems and report the existence of defects with spin-triplet ground states and a zero-field splitting (ZFS) in the terahertz (THz) regime, in contrast to typical gigahertz values. These defects can couple to resonant near-infrared radiation, providing a route to applications as high-fidelity qubits controlled by spin-dependent optical transitions. The THz ZFS implies that these high-fidelity operations can take place at higher temperatures compared to the case for GHz qubits. Our results also point toward the possibility of realising a single-photon THz emitter. This work broadens the scope of quantum defects, highlighting the opportunities for next generation THz quantum technologies - an area of growing interest given the rapid advancement in the development of THz sources and detectors. |
| title | Quantum Defects in 2D Transition Metal Dichalcogenides for Terahertz Technologies |
| topic | Materials Science |
| url | https://arxiv.org/abs/2311.11092 |