Quantum-well resonances caused by partial confinement in MgO-based magnetic tunnel junctions
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arXiv
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| Format: | Preprint |
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2023
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| author | Jiang, L. N. Chi, B. Y. Chen, W. Z. Han, X. F. |
| author_facet | Jiang, L. N. Chi, B. Y. Chen, W. Z. Han, X. F. |
| contents | Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag MTJs as examples, via first-principles calculations, we demonstrate that the partial confinement of $Δ_1$ electron at Al/Fe interface and the full confinement at Fe/MgO interface combine to produce quantum-well resonances in Fe. The quantum-well levels of Fe can be periodically adjusted by two degrees of freedom: Fe and Al thickness. The oscillation period obtained from conductance $G_{\uparrow\uparrow}$ is 2.13 ML Fe (9 ML Al), close to 2.25 ML Fe (8.33 ML Al) calculated by bcc-Fe (fcc-Al) band. The combination of long and short periods enables quantum-well levels to be finely adjusted. An ultrahigh optimistic TMR effect of $3.05\times10$$^5$\% is achieved. Our results provides a new path for designing and applying quantum-well resonances in spintronics devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_11505 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Quantum-well resonances caused by partial confinement in MgO-based magnetic tunnel junctions Jiang, L. N. Chi, B. Y. Chen, W. Z. Han, X. F. Materials Science Mesoscale and Nanoscale Physics Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag MTJs as examples, via first-principles calculations, we demonstrate that the partial confinement of $Δ_1$ electron at Al/Fe interface and the full confinement at Fe/MgO interface combine to produce quantum-well resonances in Fe. The quantum-well levels of Fe can be periodically adjusted by two degrees of freedom: Fe and Al thickness. The oscillation period obtained from conductance $G_{\uparrow\uparrow}$ is 2.13 ML Fe (9 ML Al), close to 2.25 ML Fe (8.33 ML Al) calculated by bcc-Fe (fcc-Al) band. The combination of long and short periods enables quantum-well levels to be finely adjusted. An ultrahigh optimistic TMR effect of $3.05\times10$$^5$\% is achieved. Our results provides a new path for designing and applying quantum-well resonances in spintronics devices. |
| title | Quantum-well resonances caused by partial confinement in MgO-based magnetic tunnel junctions |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2311.11505 |