Quantum dots on the InAs(110) cleavage surface created by atom manipulation
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arXiv
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| Main Authors: | , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866912291290611712 |
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| author | Pham, Van Dong Pan, Yi Erwin, Steven C. Fölsch, Stefan |
| author_facet | Pham, Van Dong Pan, Yi Erwin, Steven C. Fölsch, Stefan |
| contents | Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one cation and two anions, and transfers one electron to the substrate, creating an attractive quantum well for electrons in surface states. We used the scanning-probe tip to assemble the positively charged adatoms into precisely defined quantum dots exhibiting a bound state roughly 0.1 eV below the Fermi level at an intrinsic linewidth of only ~4 meV, as revealed by scanning tunneling spectroscopy. For quantum-dot dimers, we observed the emergence of a bonding and an antibonding state with even and odd wave-function character, respectively, demonstrating the capability to engineer quasi-molecular electronic states. InAs(110) constitutes a promising platform in this respect because highly perfect surfaces can be readily prepared by cleavage and charged adatoms can be generated in-situ by the scanning-probe tip. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_11848 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Quantum dots on the InAs(110) cleavage surface created by atom manipulation Pham, Van Dong Pan, Yi Erwin, Steven C. Fölsch, Stefan Mesoscale and Nanoscale Physics Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one cation and two anions, and transfers one electron to the substrate, creating an attractive quantum well for electrons in surface states. We used the scanning-probe tip to assemble the positively charged adatoms into precisely defined quantum dots exhibiting a bound state roughly 0.1 eV below the Fermi level at an intrinsic linewidth of only ~4 meV, as revealed by scanning tunneling spectroscopy. For quantum-dot dimers, we observed the emergence of a bonding and an antibonding state with even and odd wave-function character, respectively, demonstrating the capability to engineer quasi-molecular electronic states. InAs(110) constitutes a promising platform in this respect because highly perfect surfaces can be readily prepared by cleavage and charged adatoms can be generated in-situ by the scanning-probe tip. |
| title | Quantum dots on the InAs(110) cleavage surface created by atom manipulation |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2311.11848 |