Epitaxial growth and characterization of Bi$_{1-x}$Sb$_x$ thin films on (0001) sapphire substrates

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Huang, Yu-Sheng, Islam, Saurav, Ou, Yongxi, Ghosh, Supriya, Richardella, Anthony, Mkhoyan, K. Andre, Samarth, Nitin
Formato: Preprint
Publicado: 2023
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866917624519065600
author Huang, Yu-Sheng
Islam, Saurav
Ou, Yongxi
Ghosh, Supriya
Richardella, Anthony
Mkhoyan, K. Andre
Samarth, Nitin
author_facet Huang, Yu-Sheng
Islam, Saurav
Ou, Yongxi
Ghosh, Supriya
Richardella, Anthony
Mkhoyan, K. Andre
Samarth, Nitin
contents We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy reveals epitaxial growth of films of reasonable structural quality. This is further confirmed via x-ray diffraction pole figures that determine the epitaxial registry between the thin film and substrate. We further investigate the microscopic structure of thin films via Raman spectroscopy, demonstrating how the vibrational modes vary as the composition changes and discussing the implications for the crystal structure. We also characterize the samples using electrical transport measurements.
format Preprint
id arxiv_https___arxiv_org_abs_2311_11899
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Epitaxial growth and characterization of Bi$_{1-x}$Sb$_x$ thin films on (0001) sapphire substrates
Huang, Yu-Sheng
Islam, Saurav
Ou, Yongxi
Ghosh, Supriya
Richardella, Anthony
Mkhoyan, K. Andre
Samarth, Nitin
Materials Science
We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy reveals epitaxial growth of films of reasonable structural quality. This is further confirmed via x-ray diffraction pole figures that determine the epitaxial registry between the thin film and substrate. We further investigate the microscopic structure of thin films via Raman spectroscopy, demonstrating how the vibrational modes vary as the composition changes and discussing the implications for the crystal structure. We also characterize the samples using electrical transport measurements.
title Epitaxial growth and characterization of Bi$_{1-x}$Sb$_x$ thin films on (0001) sapphire substrates
topic Materials Science
url https://arxiv.org/abs/2311.11899