Kondo effect in electrostatically defined ZnO quantum dots
Fuente:
arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
| Publié: |
2023
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| _version_ | 1866913573890949120 |
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| author | Noro, Kosuke Kozuka, Yusuke Matsumura, Kazuma Kumasaka, Takeshi Fujiwara, Yoshihiro Tsukazaki, Atsushi Kawasaki, Masashi Otsuka, Tomohiro |
| author_facet | Noro, Kosuke Kozuka, Yusuke Matsumura, Kazuma Kumasaka, Takeshi Fujiwara, Yoshihiro Tsukazaki, Atsushi Kawasaki, Masashi Otsuka, Tomohiro |
| contents | Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_12508 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Kondo effect in electrostatically defined ZnO quantum dots Noro, Kosuke Kozuka, Yusuke Matsumura, Kazuma Kumasaka, Takeshi Fujiwara, Yoshihiro Tsukazaki, Atsushi Kawasaki, Masashi Otsuka, Tomohiro Mesoscale and Nanoscale Physics Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO. |
| title | Kondo effect in electrostatically defined ZnO quantum dots |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2311.12508 |