Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures
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arXiv
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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866917743704408064 |
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| author | Joe, Andrew Y. Valdivia, Andrés M. Mier Jauregui, Luis A. Pistunova, Kateryna Ding, Dapeng Zhou, You Scuri, Giovanni De Greve, Kristiaan Sushko, Andrey Kim, Bumho Taniguchi, Takashi Watanabe, Kenji Hone, James C. Lukin, Mikhail D. Park, Hongkun Kim, Philip |
| author_facet | Joe, Andrew Y. Valdivia, Andrés M. Mier Jauregui, Luis A. Pistunova, Kateryna Ding, Dapeng Zhou, You Scuri, Giovanni De Greve, Kristiaan Sushko, Andrey Kim, Bumho Taniguchi, Takashi Watanabe, Kenji Hone, James C. Lukin, Mikhail D. Park, Hongkun Kim, Philip |
| contents | Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above $2\times10^{12}$ cm$^{-2}$ can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2311_12941 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures Joe, Andrew Y. Valdivia, Andrés M. Mier Jauregui, Luis A. Pistunova, Kateryna Ding, Dapeng Zhou, You Scuri, Giovanni De Greve, Kristiaan Sushko, Andrey Kim, Bumho Taniguchi, Takashi Watanabe, Kenji Hone, James C. Lukin, Mikhail D. Park, Hongkun Kim, Philip Mesoscale and Nanoscale Physics Strongly Correlated Electrons Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above $2\times10^{12}$ cm$^{-2}$ can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices. |
| title | Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures |
| topic | Mesoscale and Nanoscale Physics Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2311.12941 |