Inducing a Tunable Skyrmion-Antiskyrmion System through Ion Beam Modification of FeGe Films
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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866910409001271296 |
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| author | Venuti, M. B. Zhang, Xiyue S. Lang, Eric J Addamane, Sadhvikas J. Paik, Hanjong Allen, Portia Sharma, Peter Muller, David Hattar, Khalid Lu, Tzu-Ming Eley, Serena |
| author_facet | Venuti, M. B. Zhang, Xiyue S. Lang, Eric J Addamane, Sadhvikas J. Paik, Hanjong Allen, Portia Sharma, Peter Muller, David Hattar, Khalid Lu, Tzu-Ming Eley, Serena |
| contents | Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic non-centrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals -- determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and anitskyrmions as storage bits and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_13130 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Inducing a Tunable Skyrmion-Antiskyrmion System through Ion Beam Modification of FeGe Films Venuti, M. B. Zhang, Xiyue S. Lang, Eric J Addamane, Sadhvikas J. Paik, Hanjong Allen, Portia Sharma, Peter Muller, David Hattar, Khalid Lu, Tzu-Ming Eley, Serena Materials Science Mesoscale and Nanoscale Physics Strongly Correlated Electrons Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic non-centrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals -- determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and anitskyrmions as storage bits and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals. |
| title | Inducing a Tunable Skyrmion-Antiskyrmion System through Ion Beam Modification of FeGe Films |
| topic | Materials Science Mesoscale and Nanoscale Physics Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2311.13130 |