Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
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2023
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| author | Ardenghi, A. Bierwagen, O. Lähnemann, J. Kler, J. Falkenstein, A. Martin, M. Mazzolini, P. |
| author_facet | Ardenghi, A. Bierwagen, O. Lähnemann, J. Kler, J. Falkenstein, A. Martin, M. Mazzolini, P. |
| contents | Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of Ga$_2$O$_3$ an interesting material for multiple applications, while In-incorporation into any polymorphs of Ga$_2$O$_3$ allows to lower their bandgap. In this work, we provide a guideline to achieve single phase $κ$-, $β$-Ga$_2$O$_3$ as well as their (In$_x$Ga$_{1-x}$)$_2$O$_3$ alloys up to x = 0.14 and x = 0.17 respectively, using In-mediated metal exchange catalysis in plasma assisted molecular beam epitaxy (MEXCAT-MBE). The polymorph transition from $κ$ to $β$ is also addressed, highlighting the fundamental role played by the thermal stability of the $κ$-Ga$_2$O$_3$. Additionally, we also demonstrate the possibility to grow ($\bar{2}$01) $β$-Ga$_2$O$_3$ on top of $α$-Al$_2$O$_3$ (0001) at temperatures at least 100 °C above those achievable with conventional non-catalyzed MBE, opening the road for increased crystal quality in heteroepitaxy. The role of the substrate, as well as strain and structural defects in the growth of $κ$-Ga$_2$O$_3$ is also investigated by growing simultaneously on three different materials: (i) $α$-Al$_2$O$_3$ (0001), (ii) 20 nm of ($\bar{2}$01) $β$-Ga$_2$O$_3$ on $α$-Al$_2$O$_3$ (0001) and (iii) ($\bar{2}$01) $β$-Ga$_2$O$_3$ single crystal. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_13318 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy Ardenghi, A. Bierwagen, O. Lähnemann, J. Kler, J. Falkenstein, A. Martin, M. Mazzolini, P. Applied Physics Materials Science Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of Ga$_2$O$_3$ an interesting material for multiple applications, while In-incorporation into any polymorphs of Ga$_2$O$_3$ allows to lower their bandgap. In this work, we provide a guideline to achieve single phase $κ$-, $β$-Ga$_2$O$_3$ as well as their (In$_x$Ga$_{1-x}$)$_2$O$_3$ alloys up to x = 0.14 and x = 0.17 respectively, using In-mediated metal exchange catalysis in plasma assisted molecular beam epitaxy (MEXCAT-MBE). The polymorph transition from $κ$ to $β$ is also addressed, highlighting the fundamental role played by the thermal stability of the $κ$-Ga$_2$O$_3$. Additionally, we also demonstrate the possibility to grow ($\bar{2}$01) $β$-Ga$_2$O$_3$ on top of $α$-Al$_2$O$_3$ (0001) at temperatures at least 100 °C above those achievable with conventional non-catalyzed MBE, opening the road for increased crystal quality in heteroepitaxy. The role of the substrate, as well as strain and structural defects in the growth of $κ$-Ga$_2$O$_3$ is also investigated by growing simultaneously on three different materials: (i) $α$-Al$_2$O$_3$ (0001), (ii) 20 nm of ($\bar{2}$01) $β$-Ga$_2$O$_3$ on $α$-Al$_2$O$_3$ (0001) and (iii) ($\bar{2}$01) $β$-Ga$_2$O$_3$ single crystal. |
| title | Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2311.13318 |