Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

Documents similaires

• Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to $β$-Ga2O3
  par: Ardenghi, A., et autres
  Publié: (2022)
• Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy
  par: Chen, Wenshan, et autres
  Publié: (2024)
• Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
  par: Chen, Wenshan, et autres
  Publié: (2024)
• Isotopic study of Raman active phonon modes in $β$-Ga$_{2}$O$_{3}$
  par: Janzen, Benjamin M., et autres
  Publié: (2020)
• Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy
  par: Williams, Martin S., et autres
  Publié: (2023)