Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes

Fuente: arXiv
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Bibliographic Details
Main Authors: Cho, Sinwoo, Barrera, Omar, Simeoni, Pietro, Wang, Ellie Y., Kramer, Jack, Chulukhadze, Vakhtang, Campbell, Joshua, Rinaldi, Matteo, Lu, Ruochen
Format: Preprint
Published: 2023
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author Cho, Sinwoo
Barrera, Omar
Simeoni, Pietro
Wang, Ellie Y.
Kramer, Jack
Chulukhadze, Vakhtang
Campbell, Joshua
Rinaldi, Matteo
Lu, Ruochen
author_facet Cho, Sinwoo
Barrera, Omar
Simeoni, Pietro
Wang, Ellie Y.
Kramer, Jack
Chulukhadze, Vakhtang
Campbell, Joshua
Rinaldi, Matteo
Lu, Ruochen
contents This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum (Al) electrodes, i.e., Al top Al bottom, Pt top Al bottom, Al top Pt bottom, and Pt top Pt bottom, are built to study the impact of electrodes on mmWave FBARs. The demonstrated FBAR with Pt top and bottom electrodes achieve electromechanical coupling (k2) of 4.0% and Q of 116 for the first-order symmetric (S1) mode at 13.7 GHz, and k2 of 1.8% and Q of 94 for third-order symmetric (S3) mode at 61.6 GHz. Through these results, we confirmed that even in the frequency band of approximately 60 GHz, ScAlN FBAR can achieve a Q factor approaching 100 with optimized fabrication and acoustic/EM design. Further development calls for stacks with better quality in piezoelectric and metallic layers.
format Preprint
id arxiv_https___arxiv_org_abs_2311_13448
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes
Cho, Sinwoo
Barrera, Omar
Simeoni, Pietro
Wang, Ellie Y.
Kramer, Jack
Chulukhadze, Vakhtang
Campbell, Joshua
Rinaldi, Matteo
Lu, Ruochen
Signal Processing
This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum (Al) electrodes, i.e., Al top Al bottom, Pt top Al bottom, Al top Pt bottom, and Pt top Pt bottom, are built to study the impact of electrodes on mmWave FBARs. The demonstrated FBAR with Pt top and bottom electrodes achieve electromechanical coupling (k2) of 4.0% and Q of 116 for the first-order symmetric (S1) mode at 13.7 GHz, and k2 of 1.8% and Q of 94 for third-order symmetric (S3) mode at 61.6 GHz. Through these results, we confirmed that even in the frequency band of approximately 60 GHz, ScAlN FBAR can achieve a Q factor approaching 100 with optimized fabrication and acoustic/EM design. Further development calls for stacks with better quality in piezoelectric and metallic layers.
title Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes
topic Signal Processing
url https://arxiv.org/abs/2311.13448