Electrically tunable correlated domain wall network in twisted bilayer graphene

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Wang, Hao-Chien, Hsu, Chen-Hsuan
Format: Preprint
Published: 2023
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866914876704686080
author Wang, Hao-Chien
Hsu, Chen-Hsuan
author_facet Wang, Hao-Chien
Hsu, Chen-Hsuan
contents We investigate the domain wall network in twisted bilayer graphene (TBG) under the influence of interlayer bias and screening effect from the layered structure. Starting from the continuum model, we analyze the low-energy domain wall modes within the moiré bilayer structure and obtain an analytic form representing charge density distributions of the two-dimensional structure. By computing the screened electron-electron interaction strengths both within and between the domain walls, we develop a bosonized model that describes the correlated domain wall network. We demonstrate that these interaction strengths can be modified through an applied interlayer bias, screening length and dielectric materials, and show how the model can be employed to investigate various properties of the domain wall network and its stability. We compute correlation functions both without and with phonons. Including electron-phonon coupling in the network, we establish phase diagrams from these correlation functions. These diagrams illustrate electrical tunability of the network between various phases, such as density wave states and superconductivity. Our findings reveal the domain wall network as a promising platform for the experimental manipulation of electron-electron interactions in low dimensions and the study of strongly correlated matter. We point out that our investigation not only enhances the understanding of domain wall modes in TBG but also has broader implications for the development of moiré devices.
format Preprint
id arxiv_https___arxiv_org_abs_2311_14384
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Electrically tunable correlated domain wall network in twisted bilayer graphene
Wang, Hao-Chien
Hsu, Chen-Hsuan
Mesoscale and Nanoscale Physics
We investigate the domain wall network in twisted bilayer graphene (TBG) under the influence of interlayer bias and screening effect from the layered structure. Starting from the continuum model, we analyze the low-energy domain wall modes within the moiré bilayer structure and obtain an analytic form representing charge density distributions of the two-dimensional structure. By computing the screened electron-electron interaction strengths both within and between the domain walls, we develop a bosonized model that describes the correlated domain wall network. We demonstrate that these interaction strengths can be modified through an applied interlayer bias, screening length and dielectric materials, and show how the model can be employed to investigate various properties of the domain wall network and its stability. We compute correlation functions both without and with phonons. Including electron-phonon coupling in the network, we establish phase diagrams from these correlation functions. These diagrams illustrate electrical tunability of the network between various phases, such as density wave states and superconductivity. Our findings reveal the domain wall network as a promising platform for the experimental manipulation of electron-electron interactions in low dimensions and the study of strongly correlated matter. We point out that our investigation not only enhances the understanding of domain wall modes in TBG but also has broader implications for the development of moiré devices.
title Electrically tunable correlated domain wall network in twisted bilayer graphene
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2311.14384