Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator
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arXiv
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| Format: | Preprint |
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2023
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| _version_ | 1866913313098563584 |
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| author | Tan, Ying Niu, Shengpu Billet, Maximilien Singh, Nishant Niels, Margot Vanackere, Tom Van Kerrebrouck, Joris Roelkens, Gunther Kuyken, Bart Van Thourhout, Dries |
| author_facet | Tan, Ying Niu, Shengpu Billet, Maximilien Singh, Nishant Niels, Margot Vanackere, Tom Van Kerrebrouck, Joris Roelkens, Gunther Kuyken, Bart Van Thourhout, Dries |
| contents | Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy "pick and place", which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of -1.5dB, extinction ratio of -37dB, electro-optical bandwidth of 16GHz and modulation rates up to 45Gps. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2311_15387 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator Tan, Ying Niu, Shengpu Billet, Maximilien Singh, Nishant Niels, Margot Vanackere, Tom Van Kerrebrouck, Joris Roelkens, Gunther Kuyken, Bart Van Thourhout, Dries Optics Applied Physics Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of scalability, standardization, and the complexity of integration. Heterogeneous integration comes to solve this key challenge. Micro-transfer printing of thin-film lithium niobate brings TFLN to well-established silicon ecosystem by easy "pick and place", which showcases immense potential in constructing high-density, cost-effective, highly versatile heterogeneous integrated circuits. Here, we demonstrated for the first time a micro-transfer-printed thin film lithium niobate (TFLN)-on-silicon ring modulator, which is an important step towards dense integration of performant lithium niobate modulators with compact and scalable silicon circuity. The presented device exhibits an insertion loss of -1.5dB, extinction ratio of -37dB, electro-optical bandwidth of 16GHz and modulation rates up to 45Gps. |
| title | Micro-transfer-printed Thin film lithium niobate (TFLN)-on-Silicon Ring Modulator |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2311.15387 |