Resolved Raman sideband cooling of a single optically trapped cesium atom

Fuente: arXiv
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Main Authors: Tian, Zhuangzhuang, Chang, Haobo, Lv, Xin, Yang, Mengna, Wang, Zhihui, Yang, Pengfei, Zhang, Pengfei, Li, Gang, Zhang, Tiancai
Format: Preprint
Published: 2023
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author Tian, Zhuangzhuang
Chang, Haobo
Lv, Xin
Yang, Mengna
Wang, Zhihui
Yang, Pengfei
Zhang, Pengfei
Li, Gang
Zhang, Tiancai
author_facet Tian, Zhuangzhuang
Chang, Haobo
Lv, Xin
Yang, Mengna
Wang, Zhihui
Yang, Pengfei
Zhang, Pengfei
Li, Gang
Zhang, Tiancai
contents We developed a resolved Raman sideband cooling scheme that can efficiently prepare a single optically trapped cesium (Cs) atom in its motional ground states. A two-photon Raman process between two outermost Zeeman sublevels in a single hyperfine state is applied to reduce the phonon number. Our scheme is less sensitive to the variation in the magnetic field than the commonly used scheme where the two outermost Zeeman sublevels belonging to the two separate ground hyperfine states are taken. Fast optical pumping with less spontaneous emission guarantees the efficiency of the cooling process. After cooling for 50 ms, 82% of the Cs atoms populate their three-dimensional ground states. Our scheme improves the long-term stability of Raman sideband cooling in the presence of magnetic field drift and is thus suitable for cooling other trapped atoms or ions with abundant magnetic sublevels.
format Preprint
id arxiv_https___arxiv_org_abs_2311_17494
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Resolved Raman sideband cooling of a single optically trapped cesium atom
Tian, Zhuangzhuang
Chang, Haobo
Lv, Xin
Yang, Mengna
Wang, Zhihui
Yang, Pengfei
Zhang, Pengfei
Li, Gang
Zhang, Tiancai
Quantum Physics
Atomic Physics
We developed a resolved Raman sideband cooling scheme that can efficiently prepare a single optically trapped cesium (Cs) atom in its motional ground states. A two-photon Raman process between two outermost Zeeman sublevels in a single hyperfine state is applied to reduce the phonon number. Our scheme is less sensitive to the variation in the magnetic field than the commonly used scheme where the two outermost Zeeman sublevels belonging to the two separate ground hyperfine states are taken. Fast optical pumping with less spontaneous emission guarantees the efficiency of the cooling process. After cooling for 50 ms, 82% of the Cs atoms populate their three-dimensional ground states. Our scheme improves the long-term stability of Raman sideband cooling in the presence of magnetic field drift and is thus suitable for cooling other trapped atoms or ions with abundant magnetic sublevels.
title Resolved Raman sideband cooling of a single optically trapped cesium atom
topic Quantum Physics
Atomic Physics
url https://arxiv.org/abs/2311.17494