Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe$_{2}$O$_{4}$ bilayers
Fuente:
arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2023
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| Soggetti: | |
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| _version_ | 1866929195462950912 |
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| author | Sugino, Masafumi Ueda, Kohei Kida, Takanori Hagiwara, Masayuki Matsuno, Jobu |
| author_facet | Sugino, Masafumi Ueda, Kohei Kida, Takanori Hagiwara, Masayuki Matsuno, Jobu |
| contents | We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe$_{2}$O$_{4}$ (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before depositing the Pt layer is crucial for a large SMR with better interface quality. We also found that oxygen pressure during the MFO growth hardly affects the SMR while it influences on magnetic property of the MFO film. Our findings provide important clues to further understanding the spin transport at interfaces containing magnetic insulators, facilitating development of low power consumption devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_00370 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe$_{2}$O$_{4}$ bilayers Sugino, Masafumi Ueda, Kohei Kida, Takanori Hagiwara, Masayuki Matsuno, Jobu Materials Science We report on spin Hall magnetoresistance (SMR) in bilayers composed of Pt and magnetic insulator MgFe$_{2}$O$_{4}$ (MFO) with spinel structure. The Pt thickness dependence of the SMR reveals that annealing of the MFO surface before depositing the Pt layer is crucial for a large SMR with better interface quality. We also found that oxygen pressure during the MFO growth hardly affects the SMR while it influences on magnetic property of the MFO film. Our findings provide important clues to further understanding the spin transport at interfaces containing magnetic insulators, facilitating development of low power consumption devices. |
| title | Effect of interface quality on spin Hall magnetoresistance in Pt/MgFe$_{2}$O$_{4}$ bilayers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2312.00370 |