Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals with linear sin-band redshift of absorption and emission spectra
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866909800213774336 |
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| author | Naydenov, Sergei Kapustnyk, Oleksii Pritula, Igor Kovalenko, Nazar Terzin, Igor Sofronov, Dmitro Mateichenko, Pavel |
| author_facet | Naydenov, Sergei Kapustnyk, Oleksii Pritula, Igor Kovalenko, Nazar Terzin, Igor Sofronov, Dmitro Mateichenko, Pavel |
| contents | Doped semiconductor crystals of solid solution $Cd_{1-x}Mn_{x}Te:Fe^{2+}$ were grown by the high-pressure Bridgman method covering the range of its existence as a zinc blende crystal structure. The concentration of Fe-impurities was approximately 0.001 wt.% in all studied samples. The correlations between the composition of solid solution crystals of $Cd_{1-x}Mn_{x}Te:Fe^{2+}$, band gap, lattice period and the maxima positions of the $Fe^{2+}$ active ion absorption and emission spectra were found. A new theoretical model based on the principle of additivity for solid solution semiconductor materials has been used for explaining the long-wavelength ''redshift'' of absorption and luminescence bands in the spectra of $Cd_{1-x}Mn_{x}Te:Fe^{2+}$ crystals with increasing solid solution concentration. The obtained results can be used to predict the lasing range for $Cd_{1-x}Mn_{x}Te:Fe^{2+}$ crystal media (in all possible $Mn$ concentrations), which is potentially the longest wavelength active material for mid-IR lasing. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2312_01377 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals with linear sin-band redshift of absorption and emission spectra Naydenov, Sergei Kapustnyk, Oleksii Pritula, Igor Kovalenko, Nazar Terzin, Igor Sofronov, Dmitro Mateichenko, Pavel Materials Science Applied Physics Instrumentation and Detectors Optics Doped semiconductor crystals of solid solution $Cd_{1-x}Mn_{x}Te:Fe^{2+}$ were grown by the high-pressure Bridgman method covering the range of its existence as a zinc blende crystal structure. The concentration of Fe-impurities was approximately 0.001 wt.% in all studied samples. The correlations between the composition of solid solution crystals of $Cd_{1-x}Mn_{x}Te:Fe^{2+}$, band gap, lattice period and the maxima positions of the $Fe^{2+}$ active ion absorption and emission spectra were found. A new theoretical model based on the principle of additivity for solid solution semiconductor materials has been used for explaining the long-wavelength ''redshift'' of absorption and luminescence bands in the spectra of $Cd_{1-x}Mn_{x}Te:Fe^{2+}$ crystals with increasing solid solution concentration. The obtained results can be used to predict the lasing range for $Cd_{1-x}Mn_{x}Te:Fe^{2+}$ crystal media (in all possible $Mn$ concentrations), which is potentially the longest wavelength active material for mid-IR lasing. |
| title | Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals with linear sin-band redshift of absorption and emission spectra |
| topic | Materials Science Applied Physics Instrumentation and Detectors Optics |
| url | https://arxiv.org/abs/2312.01377 |