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| Format: | Preprint |
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2023
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| Online Access: | https://arxiv.org/abs/2312.01604 |
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| _version_ | 1866929340001812480 |
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| author | Singh, Anuja Muralidharan, Bhaskaran |
| author_facet | Singh, Anuja Muralidharan, Bhaskaran |
| contents | A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the 8-band k.p approach, we demonstrate the impact of InAs and GaSb widths on the bandgap, carrier concentration, and the oscillator strength for type-II superlattice absorbers. Subsequently, the alteration of these characteristics due to the extra AlSb layer in the M superlattice absorber is investigated. Extending our models for determining TE- and TM-polarized optical absorption, our calculations reveal that the TE-polarized absorption shows a substantial influence near the conduction-heavy hole band transition energy, which eventually diminishes, owing to the dominant TM-contribution due to the conduction-light hole band transition. Extending our analysis to the dark currents, we focus mainly on Schokley-Read-Hall recombination and radiative recombination at lower temperatures, and show that Schokley-Read-Hall dominates at low-level injection. We show that short-wavelength and mid-wavelength M superlattice structures exhibit higher quantum efficiency than the corresponding same bandgap type-II superlattice with the lower diffusion dark current. Further, we analyze the density of states blocked by the barrier; crucial for XBp photodetector after absorber examination. Our work thus sets a stage for a holistic and predictive theory aided analysis of the type-II superlattice absorbers, from the atomistic interfacial details all the way to the dark currents and absorption spectra. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_01604 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Insights into optical absorption and dark currents of the 6.1Å Type-II superlattice absorbers for MWIR and SWIR applications Singh, Anuja Muralidharan, Bhaskaran Mesoscale and Nanoscale Physics Materials Science A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the 8-band k.p approach, we demonstrate the impact of InAs and GaSb widths on the bandgap, carrier concentration, and the oscillator strength for type-II superlattice absorbers. Subsequently, the alteration of these characteristics due to the extra AlSb layer in the M superlattice absorber is investigated. Extending our models for determining TE- and TM-polarized optical absorption, our calculations reveal that the TE-polarized absorption shows a substantial influence near the conduction-heavy hole band transition energy, which eventually diminishes, owing to the dominant TM-contribution due to the conduction-light hole band transition. Extending our analysis to the dark currents, we focus mainly on Schokley-Read-Hall recombination and radiative recombination at lower temperatures, and show that Schokley-Read-Hall dominates at low-level injection. We show that short-wavelength and mid-wavelength M superlattice structures exhibit higher quantum efficiency than the corresponding same bandgap type-II superlattice with the lower diffusion dark current. Further, we analyze the density of states blocked by the barrier; crucial for XBp photodetector after absorber examination. Our work thus sets a stage for a holistic and predictive theory aided analysis of the type-II superlattice absorbers, from the atomistic interfacial details all the way to the dark currents and absorption spectra. |
| title | Insights into optical absorption and dark currents of the 6.1Å Type-II superlattice absorbers for MWIR and SWIR applications |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2312.01604 |