Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and $^{90}\mathrm{Sr}$
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arXiv
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866914820085776384 |
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| author | Debevc, J. Franks, M. Hiti, B. Kraemer, U. Kramberger, G. Mandić, I. Marco-Hernández, R. Nobels, D. J. L. Powell, S. Sonneveld, J. Steininger, H. Tsolanta, C. Vilella, E. Zhang, C. |
| author_facet | Debevc, J. Franks, M. Hiti, B. Kraemer, U. Kramberger, G. Mandić, I. Marco-Hernández, R. Nobels, D. J. L. Powell, S. Sonneveld, J. Steininger, H. Tsolanta, C. Vilella, E. Zhang, C. |
| contents | Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a $^{90}\mathrm{Sr}$ source. A sample irradiated to $5\cdot 10^{14}\,\mathrm{n}_\mathrm{eq}/\mathrm{cm}^2$ was used to study the effect of radiation damage. Timing performance was evaluated for the entire pixel matrix and with positional sensitivity within individual pixels as a function of the deposited charge. Time resolution obtained with TCT is seen to be uniform throughout the pixel's central region with approx. $220\,\mathrm{ps}$ at $12\,\mathrm{ke}^-$ of deposited charge, degrading at the edges and lower values of deposited charge. $^{90}\mathrm{Sr}$ measurements show a slightly worse time resolution as a result of delayed events coming from the peripheral areas of the pixel. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_01793 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and $^{90}\mathrm{Sr}$ Debevc, J. Franks, M. Hiti, B. Kraemer, U. Kramberger, G. Mandić, I. Marco-Hernández, R. Nobels, D. J. L. Powell, S. Sonneveld, J. Steininger, H. Tsolanta, C. Vilella, E. Zhang, C. Instrumentation and Detectors Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a $^{90}\mathrm{Sr}$ source. A sample irradiated to $5\cdot 10^{14}\,\mathrm{n}_\mathrm{eq}/\mathrm{cm}^2$ was used to study the effect of radiation damage. Timing performance was evaluated for the entire pixel matrix and with positional sensitivity within individual pixels as a function of the deposited charge. Time resolution obtained with TCT is seen to be uniform throughout the pixel's central region with approx. $220\,\mathrm{ps}$ at $12\,\mathrm{ke}^-$ of deposited charge, degrading at the edges and lower values of deposited charge. $^{90}\mathrm{Sr}$ measurements show a slightly worse time resolution as a result of delayed events coming from the peripheral areas of the pixel. |
| title | Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and $^{90}\mathrm{Sr}$ |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2312.01793 |