Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

Fuente: arXiv
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Main Authors: Koch, Jennifer, Cirillo, Carla, Battisti, Sebastiano, Ruf, Leon, Kakhaki, Zahra Makhdoumi, Paghi, Alessandro, Gulian, Armen, Teknowijoyo, Serafim, De Simoni, Giorgio, Giazotto, Francesco, Attanasio, Carmine, Scheer, Elke, Di Bernardo, Angelo
Format: Preprint
Published: 2023
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author Koch, Jennifer
Cirillo, Carla
Battisti, Sebastiano
Ruf, Leon
Kakhaki, Zahra Makhdoumi
Paghi, Alessandro
Gulian, Armen
Teknowijoyo, Serafim
De Simoni, Giorgio
Giazotto, Francesco
Attanasio, Carmine
Scheer, Elke
Di Bernardo, Angelo
author_facet Koch, Jennifer
Cirillo, Carla
Battisti, Sebastiano
Ruf, Leon
Kakhaki, Zahra Makhdoumi
Paghi, Alessandro
Gulian, Armen
Teknowijoyo, Serafim
De Simoni, Giorgio
Giazotto, Francesco
Attanasio, Carmine
Scheer, Elke
Di Bernardo, Angelo
contents The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS must be identified. Top-down fabrication protocols should be also optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor NbRe. Unlike other devices previously reported, our NbRe devices systematically exhibit GCS, when made in specific conditions, which paves the way for higher device scalability. Our results also suggest that surface properties of NbRe nanobridges and their modification during fabrication are key for GCS.
format Preprint
id arxiv_https___arxiv_org_abs_2312_04268
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium
Koch, Jennifer
Cirillo, Carla
Battisti, Sebastiano
Ruf, Leon
Kakhaki, Zahra Makhdoumi
Paghi, Alessandro
Gulian, Armen
Teknowijoyo, Serafim
De Simoni, Giorgio
Giazotto, Francesco
Attanasio, Carmine
Scheer, Elke
Di Bernardo, Angelo
Superconductivity
Materials Science
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS must be identified. Top-down fabrication protocols should be also optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor NbRe. Unlike other devices previously reported, our NbRe devices systematically exhibit GCS, when made in specific conditions, which paves the way for higher device scalability. Our results also suggest that surface properties of NbRe nanobridges and their modification during fabrication are key for GCS.
title Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium
topic Superconductivity
Materials Science
url https://arxiv.org/abs/2312.04268