Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866909207486267392 |
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| author | Mellaerts, Simon Bellani, Claudio Hsu, Wei-Fan Binetti, Alberto Schouteden, Koen Recaman-Payo, Maria Menghini, Mariela Zuazo, Juan Rubio Sánchez, Jesús López Seo, Jin Won Houssa, Michel Locquet, Jean-Pierre |
| author_facet | Mellaerts, Simon Bellani, Claudio Hsu, Wei-Fan Binetti, Alberto Schouteden, Koen Recaman-Payo, Maria Menghini, Mariela Zuazo, Juan Rubio Sánchez, Jesús López Seo, Jin Won Houssa, Michel Locquet, Jean-Pierre |
| contents | Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal-insulator transition in these ultrathin films. We shed light on the Mott-Hubbard nature of this transition, revealing an abrupt vanishing of the quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_04425 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films Mellaerts, Simon Bellani, Claudio Hsu, Wei-Fan Binetti, Alberto Schouteden, Koen Recaman-Payo, Maria Menghini, Mariela Zuazo, Juan Rubio Sánchez, Jesús López Seo, Jin Won Houssa, Michel Locquet, Jean-Pierre Materials Science Strongly Correlated Electrons Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium sesquioxide (V2O3) by means of oxygen-assisted molecular beam epitaxy. This led to a series of high-quality epitaxial ultrathin V2O3 films down to unit cell thickness, enabling the study of the intrinsic electron correlations upon confinement. By electrical and optical measurements, we demonstrate a dimensional confinement-induced metal-insulator transition in these ultrathin films. We shed light on the Mott-Hubbard nature of this transition, revealing an abrupt vanishing of the quasiparticle weight as demonstrated by photoemission spectroscopy. Furthermore, we prove that dimensional confinement acts as an effective out-of-plane stress. This highlights the structural component of correlated oxides in a confined architecture, while opening an avenue to control both in-plane and out-of-plane lattice components by epitaxial strain and confinement, respectively. |
| title | Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films |
| topic | Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2312.04425 |