Pressure-Induced Topological Dirac Semimetallic Phase in KCdP

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Main Authors: Gupta, Shivendra Kumar, Singh, Nikhilesh, Sen, Saurabh Kumar, Singh, Poorva
Format: Preprint
Published: 2023
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_version_ 1866912985714262016
author Gupta, Shivendra Kumar
Singh, Nikhilesh
Sen, Saurabh Kumar
Singh, Poorva
author_facet Gupta, Shivendra Kumar
Singh, Nikhilesh
Sen, Saurabh Kumar
Singh, Poorva
contents Dirac semimetals (DSMs), characterized by linear dispersion relations in their electronic band structure, have gained prominence due to their unique topological features and potential applications in electronic devices. Through systematic calculation, we explore the electronic structure evolution of KCdP under varying negative pressure conditions. Our findings reveal a compelling transition from a normal semiconductor to a triple point semimetal when spin-orbit coupling (SOC) is not introduced, whereas in the SOC case, it converts into a Dirac semimetallic state in KCdP under negative triaxial pressure. The electronic band structure exhibits distinct Dirac cones at the Fermi level, indicating the presence of massless Dirac fermions. Moreover, the negative pressure-induced Dirac semimetallic phase in this compound is found to be robust and is protected by crystal symmetry. We provide a symmetry analysis of the bandgap, Fermi surface, Fermi velocity, and other relevant electronic properties, offering insights into the pressure-driven phase transition in KCdP. The tunability of this material under external pressure suggests the potential utility in next-generation electronic devices and quantum technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2312_05636
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Pressure-Induced Topological Dirac Semimetallic Phase in KCdP
Gupta, Shivendra Kumar
Singh, Nikhilesh
Sen, Saurabh Kumar
Singh, Poorva
Materials Science
Dirac semimetals (DSMs), characterized by linear dispersion relations in their electronic band structure, have gained prominence due to their unique topological features and potential applications in electronic devices. Through systematic calculation, we explore the electronic structure evolution of KCdP under varying negative pressure conditions. Our findings reveal a compelling transition from a normal semiconductor to a triple point semimetal when spin-orbit coupling (SOC) is not introduced, whereas in the SOC case, it converts into a Dirac semimetallic state in KCdP under negative triaxial pressure. The electronic band structure exhibits distinct Dirac cones at the Fermi level, indicating the presence of massless Dirac fermions. Moreover, the negative pressure-induced Dirac semimetallic phase in this compound is found to be robust and is protected by crystal symmetry. We provide a symmetry analysis of the bandgap, Fermi surface, Fermi velocity, and other relevant electronic properties, offering insights into the pressure-driven phase transition in KCdP. The tunability of this material under external pressure suggests the potential utility in next-generation electronic devices and quantum technologies.
title Pressure-Induced Topological Dirac Semimetallic Phase in KCdP
topic Materials Science
url https://arxiv.org/abs/2312.05636