Investigating intrinsic silicon oxide and a lightly doped p-type layer for evolution of tail states and estimating its impact as a passivation layer in a HIT type device

Fuente: arXiv

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Bibliographic Details
Main Author:	Iftiquar, S M
Format:	Preprint
Published:	2023
Subjects:	Optics Materials Science Applied Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2312.06111