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Investigating intrinsic silicon oxide and a lightly doped p-type layer for evolution of tail states and estimating its impact as a passivation layer in a HIT type device

Fuente: arXiv

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Détails bibliographiques
Auteur principal:	Iftiquar, S M
Format:	Preprint
Publié:	2023
Sujets:	Optics Materials Science Applied Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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