Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Kaur, Simrandeep, Chanda, Tanima, Amin, Kazi Rafsanjani, Sahani, Divya, Watanabe, Kenji, Taniguchi, Takashi, Ghorai, Unmesh, Gefen, Yuval, Sreejith, G. J., Bid, Aveek
Format: Preprint
Published: 2023
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866917796753965056
author Kaur, Simrandeep
Chanda, Tanima
Amin, Kazi Rafsanjani
Sahani, Divya
Watanabe, Kenji
Taniguchi, Takashi
Ghorai, Unmesh
Gefen, Yuval
Sreejith, G. J.
Bid, Aveek
author_facet Kaur, Simrandeep
Chanda, Tanima
Amin, Kazi Rafsanjani
Sahani, Divya
Watanabe, Kenji
Taniguchi, Takashi
Ghorai, Unmesh
Gefen, Yuval
Sreejith, G. J.
Bid, Aveek
contents Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent $κ= 0.41 \pm 0.02$ and localization length exponent $γ= 2.4 \pm 0.2$ for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent $z\approx 1$. We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction channels. The observation of these global critical exponents across various quantum Hall phase transitions was masked in previous studies by significant sample-to-sample variation in the measured values of $κ$ in conventional semiconductor heterostructures, where long-range correlated disorder dominates. We show that the robust scaling exponents are valid in the limit of short-range disorder correlations.
format Preprint
id arxiv_https___arxiv_org_abs_2312_06194
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes
Kaur, Simrandeep
Chanda, Tanima
Amin, Kazi Rafsanjani
Sahani, Divya
Watanabe, Kenji
Taniguchi, Takashi
Ghorai, Unmesh
Gefen, Yuval
Sreejith, G. J.
Bid, Aveek
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
Fractional quantum Hall (FQH) phases emerge due to strong electronic interactions and are characterized by anyonic quasiparticles, each distinguished by unique topological parameters, fractional charge, and statistics. In contrast, the integer quantum Hall (IQH) effects can be understood from the band topology of non-interacting electrons. We report a surprising super-universality of the critical behavior across all FQH and IQH transitions. Contrary to the anticipated state-dependent critical exponents, our findings reveal the same critical scaling exponent $κ= 0.41 \pm 0.02$ and localization length exponent $γ= 2.4 \pm 0.2$ for fractional and integer quantum Hall transitions. From these, we extract the value of the dynamical exponent $z\approx 1$. We have achieved this in ultra-high mobility trilayer graphene devices with a metallic screening layer close to the conduction channels. The observation of these global critical exponents across various quantum Hall phase transitions was masked in previous studies by significant sample-to-sample variation in the measured values of $κ$ in conventional semiconductor heterostructures, where long-range correlated disorder dominates. We show that the robust scaling exponents are valid in the limit of short-range disorder correlations.
title Universality of Quantum Phase Transitions in the Integer and Fractional Quantum Hall Regimes
topic Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
url https://arxiv.org/abs/2312.06194