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Main Authors: Li, Xianglong, Xu, Zengxu, Hu, Songbai, Gu, Mingqiang, Zhu, Yuanmin, Liu, Qi, Yang, Yihao, Ye, Mao, Chen, Lang
Format: Preprint
Published: 2023
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Online Access:https://arxiv.org/abs/2312.06216
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author Li, Xianglong
Xu, Zengxu
Hu, Songbai
Gu, Mingqiang
Zhu, Yuanmin
Liu, Qi
Yang, Yihao
Ye, Mao
Chen, Lang
author_facet Li, Xianglong
Xu, Zengxu
Hu, Songbai
Gu, Mingqiang
Zhu, Yuanmin
Liu, Qi
Yang, Yihao
Ye, Mao
Chen, Lang
contents Ferroelectric fluorite dioxides like hafnium (HfO2)-based materials are considered to be one of the most potential candidates for nowadays large-scale integrated-circuits (ICs). While zirconia (ZrO2)-based fluorites materials, which has the same structure as HfO2 and more abundant resources and lower cost of raw materials, is usually thought to be anti- or ferroelectric-like. Here we reported a giant ferroelectric remnant polarization (Pr) amounted to 53 μC/cm2 in orthorhombic ZrO2 thin film at room temperature. This ferroelectricity arises from an electric field induced anti-ferroelectric to ferroelectric phase transition which is particularly noticeable at 77 K. Our work reveals the intrinsic ferroelectricity in ZrO2 thin films and offers a new pathway to understand the ferroelectricity origin in fluorite oxides.
format Preprint
id arxiv_https___arxiv_org_abs_2312_06216
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Emergent giant ferroelectric properties in cost-effective raw zirconia dioxide
Li, Xianglong
Xu, Zengxu
Hu, Songbai
Gu, Mingqiang
Zhu, Yuanmin
Liu, Qi
Yang, Yihao
Ye, Mao
Chen, Lang
Materials Science
Applied Physics
Ferroelectric fluorite dioxides like hafnium (HfO2)-based materials are considered to be one of the most potential candidates for nowadays large-scale integrated-circuits (ICs). While zirconia (ZrO2)-based fluorites materials, which has the same structure as HfO2 and more abundant resources and lower cost of raw materials, is usually thought to be anti- or ferroelectric-like. Here we reported a giant ferroelectric remnant polarization (Pr) amounted to 53 μC/cm2 in orthorhombic ZrO2 thin film at room temperature. This ferroelectricity arises from an electric field induced anti-ferroelectric to ferroelectric phase transition which is particularly noticeable at 77 K. Our work reveals the intrinsic ferroelectricity in ZrO2 thin films and offers a new pathway to understand the ferroelectricity origin in fluorite oxides.
title Emergent giant ferroelectric properties in cost-effective raw zirconia dioxide
topic Materials Science
Applied Physics
url https://arxiv.org/abs/2312.06216