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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2312.06216 |
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| _version_ | 1866929739795529728 |
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| author | Li, Xianglong Xu, Zengxu Hu, Songbai Gu, Mingqiang Zhu, Yuanmin Liu, Qi Yang, Yihao Ye, Mao Chen, Lang |
| author_facet | Li, Xianglong Xu, Zengxu Hu, Songbai Gu, Mingqiang Zhu, Yuanmin Liu, Qi Yang, Yihao Ye, Mao Chen, Lang |
| contents | Ferroelectric fluorite dioxides like hafnium (HfO2)-based materials are considered to be one of the most potential candidates for nowadays large-scale integrated-circuits (ICs). While zirconia (ZrO2)-based fluorites materials, which has the same structure as HfO2 and more abundant resources and lower cost of raw materials, is usually thought to be anti- or ferroelectric-like. Here we reported a giant ferroelectric remnant polarization (Pr) amounted to 53 μC/cm2 in orthorhombic ZrO2 thin film at room temperature. This ferroelectricity arises from an electric field induced anti-ferroelectric to ferroelectric phase transition which is particularly noticeable at 77 K. Our work reveals the intrinsic ferroelectricity in ZrO2 thin films and offers a new pathway to understand the ferroelectricity origin in fluorite oxides. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_06216 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Emergent giant ferroelectric properties in cost-effective raw zirconia dioxide Li, Xianglong Xu, Zengxu Hu, Songbai Gu, Mingqiang Zhu, Yuanmin Liu, Qi Yang, Yihao Ye, Mao Chen, Lang Materials Science Applied Physics Ferroelectric fluorite dioxides like hafnium (HfO2)-based materials are considered to be one of the most potential candidates for nowadays large-scale integrated-circuits (ICs). While zirconia (ZrO2)-based fluorites materials, which has the same structure as HfO2 and more abundant resources and lower cost of raw materials, is usually thought to be anti- or ferroelectric-like. Here we reported a giant ferroelectric remnant polarization (Pr) amounted to 53 μC/cm2 in orthorhombic ZrO2 thin film at room temperature. This ferroelectricity arises from an electric field induced anti-ferroelectric to ferroelectric phase transition which is particularly noticeable at 77 K. Our work reveals the intrinsic ferroelectricity in ZrO2 thin films and offers a new pathway to understand the ferroelectricity origin in fluorite oxides. |
| title | Emergent giant ferroelectric properties in cost-effective raw zirconia dioxide |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2312.06216 |