Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2023
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866913313204469760 |
|---|---|
| author | Neul, Malte Sprave, Isabelle V. Diebel, Laura K. Zinkl, Lukas G. Fuchs, Florian Yamamoto, Yuji Vedder, Christian Bougeard, Dominique Schreiber, Lars R. |
| author_facet | Neul, Malte Sprave, Isabelle V. Diebel, Laura K. Zinkl, Lukas G. Fuchs, Florian Yamamoto, Yuji Vedder, Christian Bougeard, Dominique Schreiber, Lars R. |
| contents | Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_06267 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K Neul, Malte Sprave, Isabelle V. Diebel, Laura K. Zinkl, Lukas G. Fuchs, Florian Yamamoto, Yuji Vedder, Christian Bougeard, Dominique Schreiber, Lars R. Applied Physics Materials Science Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures. |
| title | Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2312.06267 |