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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2312.06954 |
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| _version_ | 1866917576673591296 |
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| author | Sun, Feng Hong, Aijun |
| author_facet | Sun, Feng Hong, Aijun |
| contents | The mobility formula based on deformation potential (DP) theory is of great importance in semiconductor physics. However, the related calculations for the DP constant are controversial. It is necessary to redo in-depth and comprehensive research on the mobility of single crystal silicon and the related parameters such as the effective mass and the DP constant. In this work the conductivity effective mass is redefined and a method based on the first principles is presented to evaluate the correction of the DP constant. It is found that the effective mass is closer to experimental data and the correction of the DP is a negligible value of about 0.3 eV. Using these parameters, we obtain the mobilities of the single crystal silicon in reasonable agreement with the experimental values. Our method can be effectively applied to the prediction for the mobility in bulk materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_06954 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Re-understanding of the deformation potential constant in the single crystal silicon Sun, Feng Hong, Aijun Materials Science The mobility formula based on deformation potential (DP) theory is of great importance in semiconductor physics. However, the related calculations for the DP constant are controversial. It is necessary to redo in-depth and comprehensive research on the mobility of single crystal silicon and the related parameters such as the effective mass and the DP constant. In this work the conductivity effective mass is redefined and a method based on the first principles is presented to evaluate the correction of the DP constant. It is found that the effective mass is closer to experimental data and the correction of the DP is a negligible value of about 0.3 eV. Using these parameters, we obtain the mobilities of the single crystal silicon in reasonable agreement with the experimental values. Our method can be effectively applied to the prediction for the mobility in bulk materials. |
| title | Re-understanding of the deformation potential constant in the single crystal silicon |
| topic | Materials Science |
| url | https://arxiv.org/abs/2312.06954 |