Electronic band structure of Sb2Te3
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arXiv
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| _version_ | 1866929319150878720 |
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| author | Mohelsky, I. Wyzula, J. Mardele, F. Le Abadizaman, F. Caha, O. Dubroka, A. Sun, X. D. Cho, C. W. Piot, B. A. Tanzim, M. F. Aguilera, I. Bauer, G. Springholz, G. Orlita, M. |
| author_facet | Mohelsky, I. Wyzula, J. Mardele, F. Le Abadizaman, F. Caha, O. Dubroka, A. Sun, X. D. Cho, C. W. Piot, B. A. Tanzim, M. F. Aguilera, I. Bauer, G. Springholz, G. Orlita, M. |
| contents | Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the Γpoint, or along the trigonal axis, and its width reaches Eg = 190 meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_07402 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Electronic band structure of Sb2Te3 Mohelsky, I. Wyzula, J. Mardele, F. Le Abadizaman, F. Caha, O. Dubroka, A. Sun, X. D. Cho, C. W. Piot, B. A. Tanzim, M. F. Aguilera, I. Bauer, G. Springholz, G. Orlita, M. Materials Science Here we report on Landau level spectroscopy of an epitaxially grown thin film of the topological insulator Sb2Te3, complemented by ellipsometry and magneto-transport measurements. The observed response suggests that Sb2Te3 is a direct-gap semiconductor with the fundamental band gap located at the Γpoint, or along the trigonal axis, and its width reaches Eg = 190 meV at low temperatures. Our data also indicate the presence of other low-energy extrema with a higher multiplicity in both the conduction and valence bands. The conclusions based on our experimental data are confronted with and to a great extent corroborated by the electronic band structure calculated using the GW method. |
| title | Electronic band structure of Sb2Te3 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2312.07402 |