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Main Author: Lambrecht, Walter R. L.
Format: Preprint
Published: 2023
Subjects:
Online Access:https://arxiv.org/abs/2312.08486
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author Lambrecht, Walter R. L.
author_facet Lambrecht, Walter R. L.
contents LiGa$_5$O$_8$ in the spinel type structure is investigated as a potential ultra-wide-band-gap semiconductor. The band structure is determined using the quasiparticle self-consistent $GW$ method and the optical properties are calculated at the Bethe Salpeter Equation level including electron-hole interaction effects. The optical gap including exciton effects and an estimate of the zero-point motion electron phonon coupling renormalizations is estimated to be about 5.2$\pm0.1$ eV with an exciton binding energy of about 0.4 eV. Si doping as potential n-type dopant is investigated and found to be a promising shallow donor.
format Preprint
id arxiv_https___arxiv_org_abs_2312_08486
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Spinel LiGa$_5$O$_8$ prospects as ultra-wideband-gap semiconductor: band structure, optical properties and doping
Lambrecht, Walter R. L.
Materials Science
LiGa$_5$O$_8$ in the spinel type structure is investigated as a potential ultra-wide-band-gap semiconductor. The band structure is determined using the quasiparticle self-consistent $GW$ method and the optical properties are calculated at the Bethe Salpeter Equation level including electron-hole interaction effects. The optical gap including exciton effects and an estimate of the zero-point motion electron phonon coupling renormalizations is estimated to be about 5.2$\pm0.1$ eV with an exciton binding energy of about 0.4 eV. Si doping as potential n-type dopant is investigated and found to be a promising shallow donor.
title Spinel LiGa$_5$O$_8$ prospects as ultra-wideband-gap semiconductor: band structure, optical properties and doping
topic Materials Science
url https://arxiv.org/abs/2312.08486