Insulator-to-metal Mott transition facilitated by lattice deformation in monolayer $α$-RuCl$_3$ on graphite
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| Main Authors: | , , , , , , , , , |
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| Format: | Preprint |
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2023
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| _version_ | 1866914629324636160 |
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| author | Zheng, Xiaohu Takuma, Ogasawara Zhou, Huaxue Yang, Chongli Han, Xin Wang, Gang Ren, Junhai Shi, Youguo Tanigaki, Katsumi Du, Rui-Rui |
| author_facet | Zheng, Xiaohu Takuma, Ogasawara Zhou, Huaxue Yang, Chongli Han, Xin Wang, Gang Ren, Junhai Shi, Youguo Tanigaki, Katsumi Du, Rui-Rui |
| contents | Creating heterostructures with graphene/graphite is a practical method for charge-doping $α$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy measurements on $α$-RuCl$_3$ with various lattice deformations reveal that both in-plane and out-of-plane lattice distortions may collapse the Mott-gap in the case of monolayer $α$-RuCl$_3$ in proximity to graphite, but have little impact on its bulk form alone. In the Mott-Hubbard framework, the transition is attributed to the lattice distortion-facilitated substantial modulation of the electron correlation parameter. Observation of the orbital textures on a highly compressed monolayer $α$-RuCl$_3$ flake on graphite provides valuable evidence that electrons are efficiently transferred from the heterointerface into Cl3$p$ orbitals under the lattice distortion. It is believed that the splitting of Ru $t_{2g}$ bands within the trigonal distortion of Ru-Cl-Ru octahedra bonds generated the electrons transfer pathways. The increase of the Cl3$p$ states enhance the hopping integral in the Mott-Hubbard bands, resulting in the Mott-transition. These findings suggest a new route for implementing the insulator-to-metal transition upon doping in $α$-RuCl$_3$ by deforming the lattice in addition to the formation of heterostructure. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2312_08918 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Insulator-to-metal Mott transition facilitated by lattice deformation in monolayer $α$-RuCl$_3$ on graphite Zheng, Xiaohu Takuma, Ogasawara Zhou, Huaxue Yang, Chongli Han, Xin Wang, Gang Ren, Junhai Shi, Youguo Tanigaki, Katsumi Du, Rui-Rui Strongly Correlated Electrons Mesoscale and Nanoscale Physics Creating heterostructures with graphene/graphite is a practical method for charge-doping $α$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy measurements on $α$-RuCl$_3$ with various lattice deformations reveal that both in-plane and out-of-plane lattice distortions may collapse the Mott-gap in the case of monolayer $α$-RuCl$_3$ in proximity to graphite, but have little impact on its bulk form alone. In the Mott-Hubbard framework, the transition is attributed to the lattice distortion-facilitated substantial modulation of the electron correlation parameter. Observation of the orbital textures on a highly compressed monolayer $α$-RuCl$_3$ flake on graphite provides valuable evidence that electrons are efficiently transferred from the heterointerface into Cl3$p$ orbitals under the lattice distortion. It is believed that the splitting of Ru $t_{2g}$ bands within the trigonal distortion of Ru-Cl-Ru octahedra bonds generated the electrons transfer pathways. The increase of the Cl3$p$ states enhance the hopping integral in the Mott-Hubbard bands, resulting in the Mott-transition. These findings suggest a new route for implementing the insulator-to-metal transition upon doping in $α$-RuCl$_3$ by deforming the lattice in addition to the formation of heterostructure. |
| title | Insulator-to-metal Mott transition facilitated by lattice deformation in monolayer $α$-RuCl$_3$ on graphite |
| topic | Strongly Correlated Electrons Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2312.08918 |