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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
| Published: |
2023
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2312.09235 |
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| _version_ | 1866908572255780864 |
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| author | Frink, Collin C. D. Oh, Talise Joseph, E. S. Losert, Merritt P. MacQuarrie, E. R. Woods, Benjamin D. Eriksson, M. A. Friesen, Mark |
| author_facet | Frink, Collin C. D. Oh, Talise Joseph, E. S. Losert, Merritt P. MacQuarrie, E. R. Woods, Benjamin D. Eriksson, M. A. Friesen, Mark |
| contents | Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device functionality. Here we investigate strain fluctuations in Si/SiGe heterostructures, caused by (i) lattice mismatch, (ii) materials-dependent thermal contraction, and (iii) depositional stress in the metal gates. By simulating gate geometries, ranging from simple to realistically complicated, we identify two opposing effects in overlapping gate structures: (a) gate-driven behavior arising from isolated gates vs (b) oxide-driven behavior arising from the thin oxides separating the gates in an overlapping geometry. These limiting behaviors induce strains of opposite sign, pointing towards the possibility of suppressing strain fluctuations through careful design. Here, we demonstrate nearly total suppression of short-range strain fluctuation through device optimization. These results suggest that strain fluctuations should not pose an insurmountable challenge to qubit uniformity, provided that oxide and overlapping gate thicknesses can be tuned. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_09235 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Reducing strain fluctuations in quantum dot devices by gate-layer stacking Frink, Collin C. D. Oh, Talise Joseph, E. S. Losert, Merritt P. MacQuarrie, E. R. Woods, Benjamin D. Eriksson, M. A. Friesen, Mark Mesoscale and Nanoscale Physics Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart strain-induced potential fluctuations that can potentially impair device functionality. Here we investigate strain fluctuations in Si/SiGe heterostructures, caused by (i) lattice mismatch, (ii) materials-dependent thermal contraction, and (iii) depositional stress in the metal gates. By simulating gate geometries, ranging from simple to realistically complicated, we identify two opposing effects in overlapping gate structures: (a) gate-driven behavior arising from isolated gates vs (b) oxide-driven behavior arising from the thin oxides separating the gates in an overlapping geometry. These limiting behaviors induce strains of opposite sign, pointing towards the possibility of suppressing strain fluctuations through careful design. Here, we demonstrate nearly total suppression of short-range strain fluctuation through device optimization. These results suggest that strain fluctuations should not pose an insurmountable challenge to qubit uniformity, provided that oxide and overlapping gate thicknesses can be tuned. |
| title | Reducing strain fluctuations in quantum dot devices by gate-layer stacking |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2312.09235 |