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| Format: | Preprint |
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2023
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| Online-Zugang: | https://arxiv.org/abs/2312.13504 |
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| _version_ | 1866913358944403456 |
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| author | Mittal, Sarang Adachi, Kazemi Frattini, Nicholas E. Urmey, Maxwell D. Lin, Sheng-Xiang Emser, Alec L. Metzger, Cyril Talamo, Luca Dickson, Sarah Carlson, David Papp, Scott B. Regal, Cindy A. Lehnert, Konrad W. |
| author_facet | Mittal, Sarang Adachi, Kazemi Frattini, Nicholas E. Urmey, Maxwell D. Lin, Sheng-Xiang Emser, Alec L. Metzger, Cyril Talamo, Luca Dickson, Sarah Carlson, David Papp, Scott B. Regal, Cindy A. Lehnert, Konrad W. |
| contents | The dielectric loss of silicon nitride (Si$_3$N$_4$) limits the performance of microwave-frequency devices that rely on this material for sensing, signal processing, and quantum communication. Using superconducting resonant circuits, we measure the cryogenic loss tangent of either as-deposited or high-temperature annealed stoichiometric Si$_3$N$_4$ as a function of drive strength and temperature. The internal loss behavior of the electrical resonators is largely consistent with the standard tunneling model of two-level systems (TLS), including damping caused by resonant energy exchange with TLS and by the relaxation of non-resonant TLS. We further supplement the TLS model with a self-heating effect to explain an increase in the loss observed in as-deposited films at large drive powers. Critically, we demonstrate that annealing remedies this anomalous power-induced loss, reduces the relaxation-type damping by more than two orders of magnitude, and reduces the resonant-type damping by a factor of three. Employing infrared absorption spectroscopy, we find that annealing reduces the concentration of hydrogen in the Si$_3$N$_4$, suggesting that hydrogen impurities cause substantial dissipation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_13504 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Annealing reduces Si$_3$N$_4$ microwave-frequency dielectric loss in superconducting resonators Mittal, Sarang Adachi, Kazemi Frattini, Nicholas E. Urmey, Maxwell D. Lin, Sheng-Xiang Emser, Alec L. Metzger, Cyril Talamo, Luca Dickson, Sarah Carlson, David Papp, Scott B. Regal, Cindy A. Lehnert, Konrad W. Quantum Physics The dielectric loss of silicon nitride (Si$_3$N$_4$) limits the performance of microwave-frequency devices that rely on this material for sensing, signal processing, and quantum communication. Using superconducting resonant circuits, we measure the cryogenic loss tangent of either as-deposited or high-temperature annealed stoichiometric Si$_3$N$_4$ as a function of drive strength and temperature. The internal loss behavior of the electrical resonators is largely consistent with the standard tunneling model of two-level systems (TLS), including damping caused by resonant energy exchange with TLS and by the relaxation of non-resonant TLS. We further supplement the TLS model with a self-heating effect to explain an increase in the loss observed in as-deposited films at large drive powers. Critically, we demonstrate that annealing remedies this anomalous power-induced loss, reduces the relaxation-type damping by more than two orders of magnitude, and reduces the resonant-type damping by a factor of three. Employing infrared absorption spectroscopy, we find that annealing reduces the concentration of hydrogen in the Si$_3$N$_4$, suggesting that hydrogen impurities cause substantial dissipation. |
| title | Annealing reduces Si$_3$N$_4$ microwave-frequency dielectric loss in superconducting resonators |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2312.13504 |