Reversal of Orbital Hall Conductivity and Emergence of Tunable Topological Quantum States in Orbital Hall Insulator
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2023
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866913342179770368 |
|---|---|
| author | Ji, Shilei Quan, Chuye Yao, Ruijia Yang, Jianping Li, Xing'ao |
| author_facet | Ji, Shilei Quan, Chuye Yao, Ruijia Yang, Jianping Li, Xing'ao |
| contents | Recent findings indicate that orbital angular momentum (OAM) has the capability to induce the intrinsic orbital Hall effect (OHE), which is characterized by orbital Chern number in the orbital Hall insulator. Unlike the spin-polarized channel in Quantum anomalous Hall insulator, the OAM is valley-locked, posing challenges in manipulating the corresponding edge state. Here we demonstrate the sign-reversal orbital Chern number through strain engineering by combing the $k \cdot p$ model and first-principles calculation. Under the manipulation of strain, we observe the transfer of non-zero OAM from the valence band to the conduction band, aligning with the orbital contribution in the electronic structure. Our investigation reveals that electrons and holes with OAM exhibit opposing trajectories, resulting in a reversal of the orbital Hall conductivity. Furthermore, we explore the topological quantum state between the sign-reversible OHE. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_14181 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Reversal of Orbital Hall Conductivity and Emergence of Tunable Topological Quantum States in Orbital Hall Insulator Ji, Shilei Quan, Chuye Yao, Ruijia Yang, Jianping Li, Xing'ao Mesoscale and Nanoscale Physics Materials Science Quantum Physics Recent findings indicate that orbital angular momentum (OAM) has the capability to induce the intrinsic orbital Hall effect (OHE), which is characterized by orbital Chern number in the orbital Hall insulator. Unlike the spin-polarized channel in Quantum anomalous Hall insulator, the OAM is valley-locked, posing challenges in manipulating the corresponding edge state. Here we demonstrate the sign-reversal orbital Chern number through strain engineering by combing the $k \cdot p$ model and first-principles calculation. Under the manipulation of strain, we observe the transfer of non-zero OAM from the valence band to the conduction band, aligning with the orbital contribution in the electronic structure. Our investigation reveals that electrons and holes with OAM exhibit opposing trajectories, resulting in a reversal of the orbital Hall conductivity. Furthermore, we explore the topological quantum state between the sign-reversible OHE. |
| title | Reversal of Orbital Hall Conductivity and Emergence of Tunable Topological Quantum States in Orbital Hall Insulator |
| topic | Mesoscale and Nanoscale Physics Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2312.14181 |