Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch
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arXiv
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| Autori principali: | , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2023
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| _version_ | 1866917677301235712 |
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| author | Elalaily, Tosson Berke, Martin Lilja, Ilari Savin, Alexander Fülöp, Gergő Kupás, Lőrinc Kanne, Thomas Nygård, Jesper Makk, Péter Hakonen, Pertti Csonka, Szabolcs |
| author_facet | Elalaily, Tosson Berke, Martin Lilja, Ilari Savin, Alexander Fülöp, Gergő Kupás, Lőrinc Kanne, Thomas Nygård, Jesper Makk, Péter Hakonen, Pertti Csonka, Szabolcs |
| contents | The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2312_15453 |
| institution | arXiv |
| publishDate | 2023 |
| record_format | arxiv |
| spellingShingle | Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch Elalaily, Tosson Berke, Martin Lilja, Ilari Savin, Alexander Fülöp, Gergő Kupás, Lőrinc Kanne, Thomas Nygård, Jesper Makk, Péter Hakonen, Pertti Csonka, Szabolcs Mesoscale and Nanoscale Physics The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage. |
| title | Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2312.15453 |