Four-dimensional Floquet topological insulator with an emergent second Chern number

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Liu, Zheng-Rong, Chen, Rui, Zhou, Bin
Formato: Preprint
Publicado: 2023
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866916151537172480
author Liu, Zheng-Rong
Chen, Rui
Zhou, Bin
author_facet Liu, Zheng-Rong
Chen, Rui
Zhou, Bin
contents Floquet topological insulators have been widely investigated in lower-dimensional systems. However, Floquet topological insulators induced by time-periodic driving in higher-dimensional systems remain unexplored. In this work, we study the effects of time-periodic driving in a four-dimensional (4D) normal insulator, focusing on topological phase transitions at the resonant quasienergy gap. We consider two types of time-periodic driving, including a time-periodic onsite potential and a time-periodic vector potential. We reveal that both types of time-periodic driving can transform the 4D normal insulator into a 4D Floquet topological insulator characterized by an emergent second Chern number. Moreover, it is found that the topological phase of the 4D system can be modulated by tuning the strength and frequency of the time-periodic driving. Our work will be helpful for the future investigation of Floquet topological insulators in higher dimensions.
format Preprint
id arxiv_https___arxiv_org_abs_2312_16013
institution arXiv
publishDate 2023
record_format arxiv
spellingShingle Four-dimensional Floquet topological insulator with an emergent second Chern number
Liu, Zheng-Rong
Chen, Rui
Zhou, Bin
Mesoscale and Nanoscale Physics
Floquet topological insulators have been widely investigated in lower-dimensional systems. However, Floquet topological insulators induced by time-periodic driving in higher-dimensional systems remain unexplored. In this work, we study the effects of time-periodic driving in a four-dimensional (4D) normal insulator, focusing on topological phase transitions at the resonant quasienergy gap. We consider two types of time-periodic driving, including a time-periodic onsite potential and a time-periodic vector potential. We reveal that both types of time-periodic driving can transform the 4D normal insulator into a 4D Floquet topological insulator characterized by an emergent second Chern number. Moreover, it is found that the topological phase of the 4D system can be modulated by tuning the strength and frequency of the time-periodic driving. Our work will be helpful for the future investigation of Floquet topological insulators in higher dimensions.
title Four-dimensional Floquet topological insulator with an emergent second Chern number
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2312.16013